Transistors based on two-dimensional materials for future integrated circuits

S Das, A Sebastian, E Pop, CJ McClellan… - Nature …, 2021 - nature.com
Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …

Fermi level pinning dependent 2D semiconductor devices: challenges and prospects

X Liu, MS Choi, E Hwang, WJ Yoo, J Sun - Advanced Materials, 2022 - Wiley Online Library
Motivated by the high expectation for efficient electrostatic modulation of charge transport at
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …

The road for 2D semiconductors in the silicon age

S Wang, X Liu, P Zhou - Advanced Materials, 2022 - Wiley Online Library
Continued reduction in transistor size can improve the performance of silicon integrated
circuits (ICs). However, as Moore's law approaches physical limits, high‐performance …

Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe2

X Xu, Y Pan, S Liu, B Han, P Gu, S Li, W Xu, Y Peng… - Science, 2021 - science.org
The integration of two-dimensional (2D) van der Waals semiconductors into silicon
electronics technology will require the production of large-scale, uniform, and highly …

3D integration of 2D electronics

D Jayachandran, NU Sakib, S Das - Nature Reviews Electrical …, 2024 - nature.com
The adoption of three-dimensional (3D) integration has revolutionized NAND flash memory
technology, and a similar transformative potential exists for logic circuits, by stacking …

Toward high-performance p-type two-dimensional field effect transistors: contact engineering, scaling, and do**

A Oberoi, Y Han, SP Stepanoff, A Pannone, Y Sun… - ACS …, 2023 - ACS Publications
n-type field effect transistors (FETs) based on two-dimensional (2D) transition-metal
dichalcogenides (TMDs) such as MoS2 and WS2 have come close to meeting the …

Two-dimensional materials for future information technology: status and prospects

H Qiu, Z Yu, T Zhao, Q Zhang, M Xu, P Li, T Li… - Science China …, 2024 - Springer
Over the past 70 years, the semiconductor industry has undergone transformative changes,
largely driven by the miniaturization of devices and the integration of innovative structures …

Molecular approach to engineer two-dimensional devices for CMOS and beyond-CMOS applications

Y Zhao, M Gobbi, LE Hueso, P Samorì - Chemical Reviews, 2021 - ACS Publications
Two-dimensional materials (2DMs) have attracted tremendous research interest over the
last two decades. Their unique optical, electronic, thermal, and mechanical properties make …

Dielectrics for two-dimensional transition-metal dichalcogenide applications

CS Lau, S Das, IA Verzhbitskiy, D Huang, Y Zhang… - ACS …, 2023 - ACS Publications
Despite over a decade of intense research efforts, the full potential of two-dimensional
transition-metal dichalcogenides continues to be limited by major challenges. The lack of …

Controllable p‐Type Do** of 2D WSe2 via Vanadium Substitution

A Kozhakhmetov, S Stolz, AMZ Tan… - Advanced Functional …, 2021 - Wiley Online Library
Scalable substitutional do** of 2D transition metal dichalcogenides is a prerequisite to
develo** next‐generation logic and memory devices based on 2D materials. To date …