Benchmarking noise and dephasing in emerging electrical materials for quantum technologies

S Islam, S Shamim, A Ghosh - Advanced Materials, 2023‏ - Wiley Online Library
As quantum technologies develop, a specific class of electrically conducting materials is
rapidly gaining interest because they not only form the core quantum‐enabled elements in …

Electrical Low-Frequency 1/fγ Noise Due to Surface Diffusion of Scatterers on an Ultra-low-Noise Graphene Platform

M Kamada, A Laitinen, W Zeng, M Will, J Sarkar… - Nano Letters, 2021‏ - ACS Publications
Low-frequency 1/f γ noise is ubiquitous, even in high-end electronic devices. Recently, it
was found that adsorbed O2 molecules provide the dominant contribution to flux noise in …

Direct Growth of High Mobility and Low‐Noise Lateral MoS2–Graphene Heterostructure Electronics

A Behranginia, P Yasaei, AK Majee, VK Sangwan… - Small, 2017‏ - Wiley Online Library
Reliable fabrication of lateral interfaces between conducting and semiconducting 2D
materials is considered a major technological advancement for the next generation of highly …

Suppression of 1/f noise in graphene due to anisotropic mobility fluctuations induced by impurity motion

M Kamada, W Zeng, A Laitinen, J Sarkar… - Communications …, 2023‏ - nature.com
Low frequency resistance variations due to mobility fluctuations is one of the key factors of
1/f noise in metallic conductors. According to theory, such noise in a two-dimensional (2D) …

A piezo-resistive graphene strain sensor with a hollow cylindrical geometry

A Nakamura, T Hamanishi, S Kawakami… - Materials Science and …, 2017‏ - Elsevier
We propose a resistance-type strain sensor consists of hollow tubing graphene fibers (TGFs)
with dimethylpolysiloxane (PDMS) coating for millimeters-scale strain/bending detection …

[HTML][HTML] Second spectrum of 1/f noise due to mobility fluctuations: Simulations vs experiments in suspended graphene

W Zeng, K Tappura, M Kamada, A Laitinen… - Applied Physics …, 2023‏ - pubs.aip.org
Mobility fluctuations have been observed to influence 1/f noise in mesoscopic two-
dimensional conductors in recent experiments. If such mobility noise can be assigned to …

Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization

G Calabrese, L Pimpolari, S Conti, F Mavier, S Majee… - Nanoscale, 2020‏ - pubs.rsc.org
We report room temperature Hall mobility measurements, low temperature
magnetoresistance analysis and low-frequency noise characterization of inkjet-printed …

Correlated In Situ Low‐Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells Using Fullerene and Non‐Fullerene …

KA Luck, VK Sangwan, PE Hartnett… - Advanced Functional …, 2017‏ - Wiley Online Library
Non‐fullerene acceptors based on perylenediimides (PDIs) have garnered significant
interest as an alternative to fullerene acceptors in organic photovoltaics (OPVs), but their …

Ultrasensitive Biochemical Sensing Platform Enabled by Directly Grown Graphene on Insulator

Q **g, J Liu, H Wang, Y Wang, H Xue, S Ren, W Wang… - Small, 2024‏ - Wiley Online Library
To fabricate label‐free and rapid‐resulting semiconducting biosensor devices incorporating
graphene, it is pertinent to directly grow uniform graphene films on technologically important …

Understanding the bias dependence of low frequency noise in single layer graphene FETs

N Mavredakis, RG Cortadella, AB Calia, JA Garrido… - Nanoscale, 2018‏ - pubs.rsc.org
This letter investigates the bias-dependent low frequency noise of single layer graphene
field-effect transistors. Noise measurements have been conducted with electrolyte-gated …