High-temperature flexible WSe2 photodetectors with ultrahigh photoresponsivity
The development of high-temperature photodetectors can be beneficial for numerous
applications, such as aerospace engineering, military defence and harsh-environments …
applications, such as aerospace engineering, military defence and harsh-environments …
Thermally Driven Multilevel Non-Volatile Memory with Monolayer MoS2 for Brain-Inspired Artificial Learning
The demands of modern electronic components require advanced computing platforms for
efficient information processing to realize in-memory operations with a high density of data …
efficient information processing to realize in-memory operations with a high density of data …
Refractory‐Metal‐Based Chalcogenides for Energy
When it is asked,“where can refractory metals be used?,” the possible shortest answer
is,“where cannot they be used?” The uses of refractory‐metal‐based compounds in …
is,“where cannot they be used?” The uses of refractory‐metal‐based compounds in …
Laser‐Assisted Multilevel Non‐Volatile Memory Device Based on 2D van‐der‐Waals Few‐Layer‐ReS2/h‐BN/Graphene Heterostructures
Few‐layer rhenium disulfide (ReS2) field‐effect transistors with a local floating gate (FG) of
monolayer graphene separated by a thin hexagonal boron nitride tunnel layer for …
monolayer graphene separated by a thin hexagonal boron nitride tunnel layer for …
Electron Irradiation of Metal Contacts in Monolayer MoS2 Field-Effect Transistors
Metal contacts play a fundamental role in nanoscale devices. In this work, Schottky metal
contacts in monolayer molybdenum disulfide (MoS2) field-effect transistors are investigated …
contacts in monolayer molybdenum disulfide (MoS2) field-effect transistors are investigated …
Subthreshold Current Suppression in ReS2 Nanosheet-Based Field-Effect Transistors at High Temperatures
Two-dimensional rhenium disulfide (ReS2), a member of the transition-metal
dichalcogenide family, has received significant attention due to its potential applications in …
dichalcogenide family, has received significant attention due to its potential applications in …
Restricted Channel Migration in 2D Multilayer ReS2
C Kim, M Sung, SY Kim, BC Lee, Y Kim… - … Applied Materials & …, 2021 - ACS Publications
When thickness-dependent carrier mobility is coupled with Thomas–Fermi screening and
interlayer resistance effects in two-dimensional (2D) multilayer materials, a conducting …
interlayer resistance effects in two-dimensional (2D) multilayer materials, a conducting …
Electrically Tunable Room Temperature Hysteresis Crossover in Underlap MoS2 Field-Effect Transistors
Clockwise to anticlockwise hysteresis crossover in current–voltage transfer characteristics of
field-effect transistors (FETs) with graphene and MoS2 channels holds significant promise …
field-effect transistors (FETs) with graphene and MoS2 channels holds significant promise …
Development of large scale CVD grown two dimensional materials for field-effect transistors, thermally-driven neuromorphic memory, and spintronics applications
SK Mallik - arxiv preprint arxiv:2409.07357, 2024 - arxiv.org
Semiconductor research has shifted towards exploring two-dimensional (2D) materials as
candidates for next-generation electronic devices due to the limitations of existing silicon …
candidates for next-generation electronic devices due to the limitations of existing silicon …
Temperature-induced step-like enhancement of drain current in a two-dimensional ReS₂ field-effect transistor
This work focuses on the investigation of a peculiar phenomenon observed in the transfer
characteristic of field-effect transistors (FETs) based on two-dimensional Rhenium disulfide …
characteristic of field-effect transistors (FETs) based on two-dimensional Rhenium disulfide …