MOS transistor modeling for RF IC design
C Enz, Y Cheng - IEEE Journal of Solid-State Circuits, 2000 - ieeexplore.ieee.org
This paper presents the basis of the modeling of the MOS transistor for circuit simulation at
RF. A physical equivalent circuit that can easily be implemented as a Spice subcircuit is first …
RF. A physical equivalent circuit that can easily be implemented as a Spice subcircuit is first …
An MOS transistor model for RF IC design valid in all regions of operation
C Enz - IEEE Transactions on Microwave Theory and …, 2002 - ieeexplore.ieee.org
This paper presents an overview of MOS transistor modeling for RF integrated circuit design.
It starts with the description of a physical equivalent circuit that can easily be implemented as …
It starts with the description of a physical equivalent circuit that can easily be implemented as …
Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model
In this paper, the implications of inversion charge linearization in compact MOS transistor
modeling are discussed. The charge-sheet model provides the basic relation among …
modeling are discussed. The charge-sheet model provides the basic relation among …
[BOOK][B] Compact models for integrated circuit design: conventional transistors and beyond
SK Saha - 2015 - library.oapen.org
This modern treatise on compact models for circuit computer-aided design (CAD) presents
industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor …
industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor …
An adjusted constant-current method to determine saturated and linear mode threshold voltage of MOSFETs
The constant-current (CC) method uses a current criterion to determine the threshold voltage
(V TH) of metal-oxide-semiconductor (MOS) field-effect transistors. We show that using the …
(V TH) of metal-oxide-semiconductor (MOS) field-effect transistors. We show that using the …
A compact non-quasi-static extension of a charge-based MOS model
This paper presents a new and simple compact model for the intrinsic metal oxide
semiconductor (MOS) transistor, which accurately takes into account the non quasistatic …
semiconductor (MOS) transistor, which accurately takes into account the non quasistatic …
A novel approach to charge-based non-quasi-static model of the MOS transistor valid in all modes of operation
This paper presents a new set of exact analytical expressions for the small signal analysis of
the non-quasi-static operation of the MOS transistor. This model is derived from a standard …
the non-quasi-static operation of the MOS transistor. This model is derived from a standard …
A scalable compact model for the static drain current of graphene FETs
The main target of this article is to propose for the first time a physics-based continuous and
symmetric compact model that accurately captures I–V experimental dependencies induced …
symmetric compact model that accurately captures I–V experimental dependencies induced …
Comparison of a BSIM3V3 and EKV MOSFET model for a 0.5/spl mu/m CMOS process and implications for analog circuit design
SC Terry, JM Rochelle, DM Binkley… - IEEE transactions on …, 2003 - ieeexplore.ieee.org
Design requirements for high-density detector front-ends and other high-performance
analog systems routinely force designers to operate devices in moderate inversion …
analog systems routinely force designers to operate devices in moderate inversion …
Design of Cryo-CMOS Analog Circuits using the Approach
The G_m/I_D approach has proven to be an efficient technique for the design of low-power
analog circuits even in advanced technology nodes. It has already been shown that the …
analog circuits even in advanced technology nodes. It has already been shown that the …