Rare-earth nickelates RNiO3: thin films and heterostructures

S Catalano, M Gibert, J Fowlie, J Íñiguez… - Reports on Progress …, 2018 - iopscience.iop.org
This review stands in the larger framework of functional materials by focussing on
heterostructures of rare-earth nickelates, described by the chemical formula RNiO 3 where R …

Correlated oxide physics and electronics

JH Ngai, FJ Walker, CH Ahn - Annual Review of Materials …, 2014 - annualreviews.org
Transition metal oxides exhibit a range of correlated phenomena with applications to novel
electronic devices that possess remarkable functionalities. This article reviews recent …

Tuning bad metal and non-Fermi liquid behavior in a Mott material: Rare-earth nickelate thin films

E Mikheev, AJ Hauser, B Himmetoglu, NE Moreno… - Science …, 2015 - science.org
Resistances that exceed the Mott-Ioffe-Regel limit (known as bad metal behavior) and non-
Fermi liquid behavior are ubiquitous features of the normal state of many strongly correlated …

Oxygen vacancy induced room-temperature metal–insulator transition in nickelate films and its potential application in photovoltaics

L Wang, S Dash, L Chang, L You, Y Feng… - … applied materials & …, 2016 - ACS Publications
Oxygen vacancy is intrinsically coupled with magnetic, electronic, and transport properties of
transition-metal oxide materials and directly determines their multifunctionality. Here, we …

Correlated electron materials and field effect transistors for logic: a review

Y Zhou, S Ramanathan - Critical Reviews in Solid State and …, 2013 - Taylor & Francis
Correlated electron systems are among the centerpieces of modern condensed matter
sciences, where many interesting physical phenomena, such as metal-insulator transition …

Striped nanoscale phase separation at the metal–insulator transition of heteroepitaxial nickelates

G Mattoni, P Zubko, F Maccherozzi… - Nature …, 2016 - nature.com
Nucleation processes of mixed-phase states are an intrinsic characteristic of first-order
phase transitions, typically related to local symmetry breaking. Direct observation of …

All-solid-state synaptic transistors with high-temperature stability using proton pump gating of strongly correlated materials

C Oh, M Jo, J Son - ACS applied materials & interfaces, 2019 - ACS Publications
Designing energy-efficient artificial synapses with adaptive and programmable electronic
signals is essential to effectively mimic synaptic functions for brain-inspired computing …

Carrier-Induced Metal-to-Insulator Transition in Electrostatically Doped VO2

D Mondal, SR Mahapatra, SK Parate… - Chemistry of …, 2024 - ACS Publications
Metal-to-insulator transition (MIT) in strongly correlated electronic systems such as
vanadium dioxide (VO2) is known to be modulated by carrier do**. However, previous …

[HTML][HTML] Correlation between stoichiometry, strain, and metal-insulator transitions of NdNiO3 films

AJ Hauser, E Mikheev, NE Moreno, J Hwang… - Applied Physics …, 2015 - pubs.aip.org
The interplay of film stoichiometry and strain on the metal-insulator transition (MIT) and Hall
coefficient of NdNiO 3 films grown under different conditions is investigated. Unstrained …

[HTML][HTML] Tailoring the electronic transitions of NdNiO3 films through (111) pc oriented interfaces

S Catalano, M Gibert, V Bisogni, F He, R Sutarto… - APL materials, 2015 - pubs.aip.org
Bulk NdNiO 3 and thin films grown along the pseudocubic (001) pc axis display a 1st order
metal to insulator transition (MIT) together with a Néel transition at T= 200 K. Here, we show …