Simulation study of an ultralow switching loss p-GaN gate HEMT with dynamic charge storage mechanism
In this article, a dynamic charge storage mechanism is proposed for designing the p-GaN
gate dynamic charge storage high-electron-mobility transistor (DCS-HEMT) with ultralow …
gate dynamic charge storage high-electron-mobility transistor (DCS-HEMT) with ultralow …
Two-dimensional polarization do** of GaN heterojunction and its potential for realizing lateral p–n junction devices
Z Wang, L Li - Applied Physics A, 2022 - Springer
In the gallium nitride (GaN) commercial applications such as high-power illumination and
portable charging station, bipolar devices are highly demanded because of their superior …
portable charging station, bipolar devices are highly demanded because of their superior …
An analytical model on the gate control capability in p-GaN Gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps
An analytical model considering the buffer acceptor traps is presented in this paper to study
the gate control capability in p-GaN gate AlGaN/GaN high-electron-mobility transistors …
the gate control capability in p-GaN gate AlGaN/GaN high-electron-mobility transistors …
Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors
Z Wang, J Nan, Z Tian, P Liu, Y Wu, J Zhang - Micromachines, 2023 - mdpi.com
As wide bandgap semiconductors, gallium nitride (GaN) lateral high-electron-mobility
transistors (HEMTs) possess high breakdown voltage, low resistance and high frequency …
transistors (HEMTs) possess high breakdown voltage, low resistance and high frequency …
Improving breakdown voltage and threshold voltage stability by clam** channel potential for short-channel power p-GaN HEMTs
H Wang, Y Shi, Y ** channel potential to
improve breakdown voltage (BV) and threshold voltage (V TH) stability. The clam** …
improve breakdown voltage (BV) and threshold voltage (V TH) stability. The clam** …
An AlGaN/GaN HEMT with sputter-SiN passivation for the on-state performance improvement
C Yu, G Ding, Q Feng, X Wang, H Yang, W Xu… - Micro and …, 2022 - Elsevier
Abstract An AlGaN/GaN high electron mobility transistor (HEMT) using the magnetron
sputter to deposit silicon nitride (SiN) passivation layer is proposed in this paper. The AlGaN …
sputter to deposit silicon nitride (SiN) passivation layer is proposed in this paper. The AlGaN …
Impact of composition and thickness of step-graded AlGaN barrier in AlGaN/GaN heterostructures
H Liu, H Huang, K Wang, Z **e, H Wang - Materials Science in …, 2024 - Elsevier
We propose an optimization method to change the Al component and the thickness of step-
graded AlGaN barrier to achieve better electrical performance of the device. Based on the …
graded AlGaN barrier to achieve better electrical performance of the device. Based on the …
High voltage normally-off p-GaN gate HEMT with the compatible high threshold and drain current
C Yu, F Wang, J He, Y Zhang, R Sun… - ECS Journal of Solid …, 2022 - iopscience.iop.org
In this paper, we demonstrate a high voltage normally-off p-GaN gate high-electron-mobility-
transistor (HEMT) to realize the compatible high threshold voltage (V TH) and high drain …
transistor (HEMT) to realize the compatible high threshold voltage (V TH) and high drain …
Interplay Between γ–Ray Irradiation and 3DEG for Dosimeter Applications
This work investigates the cumulative dose 60 Co gamma ()–ray irradiation effects on
enhancement mode HEMT devices inheriting 3D–Electron and Hole Gases for dosimeter …
enhancement mode HEMT devices inheriting 3D–Electron and Hole Gases for dosimeter …
Simulation study of a high gate-to-source ESD robustness power p-GaN HEMT with self-triggered discharging channel
This article proposes a novel power p-GaN high-electron-mobility transistor (HEMT) with self-
triggered discharging channel to improve gate-to-source electrostatic discharge (ESD) …
triggered discharging channel to improve gate-to-source electrostatic discharge (ESD) …