Plasma-assisted atomic layer deposition: basics, opportunities, and challenges

HB Profijt, SE Potts, MCM Van de Sanden… - Journal of Vacuum …, 2011‏ - pubs.aip.org
Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the
synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one …

A review of three‐dimensional resistive switching cross‐bar array memories from the integration and materials property points of view

JY Seok, SJ Song, JH Yoon, KJ Yoon… - Advanced Functional …, 2014‏ - Wiley Online Library
Issues in the circuitry, integration, and material properties of the two‐dimensional (2D) and
three‐dimensional (3D) crossbar array (CBA)‐type resistance switching memories are …

Direct Growth of Bi2SeO5 Thin Films for High-k Dielectrics via Atomic Layer Deposition

H Park, JH Hwang, SH Oh, JJ Ryu, K Jeon, M Kang… - ACS …, 2024‏ - ACS Publications
This study describes a modified atomic layer deposition (ALD) process for fabricating BiO x
Se y thin films, targeting their application as high-k dielectrics in semiconductor devices …

Substrate-dependent ALD of Cux on TiO2 and its performance in photocatalytic CO2 reduction

M Liu, L Zheng, X Bao, Z Wang, P Wang, Y Liu… - Chemical Engineering …, 2021‏ - Elsevier
Atomic layer deposition (ALD) technique has been proved to be an efficient method to
synthesize or modify catalyst. In this study, Cu was loaded on different TiO 2 substrates …

Exploring the effects of substrate and substrate temperature on the properties of radio frequency magnetron sputtered ZnO thin films

H Puthiyottil, PR Thankamani, KJ Saji - Materials Today Communications, 2023‏ - Elsevier
The physical and optical properties of zinc oxide thin films strongly depend on the film
deposition techniques. In this work, RF magnetron sputtering was used to deposit ZnO thin …

Atomic layer deposition of chalcogenides for next-generation phase change memory

YK Lee, C Yoo, W Kim, JW Jeon… - Journal of Materials …, 2021‏ - pubs.rsc.org
Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting,
sequential reactions localized at the growing film surface. It guarantees exceptional …

Investigation on the growth initiation of Ru thin films by atomic layer deposition

SK Kim, JH Han, GH Kim, CS Hwang - Chemistry of materials, 2010‏ - ACS Publications
Ru thin films were grown on Au, Pt, TiN, TiO2, and SiO2 substrates by atomic layer
deposition using 2, 4-(dimethylpentadienyl)(ethylcyclopentadienyl) Ru (DER) dissolved in …

Recent developments in molecular precursors for atomic layer deposition

AL Johnson, JD Parish - 2018‏ - books.rsc.org
One field of organometallic and materials chemistry that has seen great advancements over
the last 20 years is that of atomic layer deposition (ALD), and in particular the development …

Atomic layer deposition of iridium using a tricarbonyl cyclopropenyl precursor and oxygen

NY Park, M Kim, YH Kim, R Ramesh… - Chemistry of …, 2022‏ - ACS Publications
Atomic layer deposition (ALD) is an advanced technology that can be used to deposit
extremely thin and conformal films of iridium (Ir). However, ALD techniques for Ir coating are …

Electrochemical aspects of zinc oxide electrodeposition on Ti6Al4V alloy

R Saidi, F Ashrafizadeh, K Raeissi… - Surface and coatings …, 2020‏ - Elsevier
Zinc oxide has become one of the most popular metal oxides in biological applications,
however, the development of an efficient coating process remains a challenge since control …