Optimized 2D Bi2Se3 thickness for broadband, high-performance, self-powered 2D/3D heterojunction photodetectors with multispectral imaging capability
Y Han, S Jiao, L Chen, P Rong, S Ren, D Wang, S Gao… - Nano Energy, 2024 - Elsevier
The hybrid 2D/3D heterostructure, which synergistically combine the high surface area and
superior surface properties of 2D materials with the volumetric advantages and mechanical …
superior surface properties of 2D materials with the volumetric advantages and mechanical …
Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H–SiC
J Yin, D Chen, H Yang, Y Liu, DN Talwar, T He… - Journal of Alloys and …, 2021 - Elsevier
A comprehensive spectroscopic study is reported for MOCVD (Metal organic chemical vapor
deposition) grown AlN thin films prepared on sapphire (Al 2 O 3) and 6H–SiC substrates …
deposition) grown AlN thin films prepared on sapphire (Al 2 O 3) and 6H–SiC substrates …
Influences of grain size, alloy composition, and temperature on mechanical characteristics of Si100-xGex alloys during indentation process
VT Pham, TH Fang - Materials Science in Semiconductor Processing, 2021 - Elsevier
We perform molecular dynamics simulations to explore the effects of grain size, alloy
composition, and temperature on the mechanical characteristics of Si 100-x Ge x alloys …
composition, and temperature on the mechanical characteristics of Si 100-x Ge x alloys …
Crystalline GaAs thin film growth on a c-plane sapphire substrate
Crystalline zinc blende GaAs has been grown on a trigonal c-plane sapphire substrate by
molecular beam epitaxy. The initial stage of GaAs thin film growth has been investigated …
molecular beam epitaxy. The initial stage of GaAs thin film growth has been investigated …
Twinned growth of ScN thin films on lattice-matched GaN substrates
Scandium nitride (ScN) has attracted significant interest in recent years for diverse electronic
and thermoelectric applications. Most ScN growth utilizes MgO and Al 2 O 3 as substrates …
and thermoelectric applications. Most ScN growth utilizes MgO and Al 2 O 3 as substrates …
GaAs epitaxial growth on R-plane sapphire substrate
Achieving epitaxial growth of III-As on r-plane sapphire would potentially allow the
integration of both laser and amplifier with corresponding RF electronics. Here we report on …
integration of both laser and amplifier with corresponding RF electronics. Here we report on …
Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
Germanium films were grown on c-plane sapphire with a 10 nm AlAs buffer layer using
molecular beam epitaxy. The effects of Ge film thickness on the surface morphology and …
molecular beam epitaxy. The effects of Ge film thickness on the surface morphology and …
GaAs layer on c-plane sapphire for light emitting sources
Abstract High-quality cubic GaAs (111) A buffer layers have been grown on an atomically flat
c-plane trigonal sapphire substrate having well-defined steps and terraces. A two-step …
c-plane trigonal sapphire substrate having well-defined steps and terraces. A two-step …
The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Ge1− xSnx growth on a new sapphire platform has been demonstrated. This involved the
growth of GeSn on Ge/GaAs layers using the algorithm developed. The resultant growths of …
growth of GeSn on Ge/GaAs layers using the algorithm developed. The resultant growths of …
Atomic simulation of crystal orientation and workpiece composition effect on nano-scratching of SiGe alloy
Silicon–germanium (SiGe) alloy is a new semiconductor material of great interest in
thermoelectric devices, optoelectronic devices, infrared detectors, and semiconductor …
thermoelectric devices, optoelectronic devices, infrared detectors, and semiconductor …