Effect of annealing parameters on optoelectronic properties of highly ordered ZnO thin films
In the present work, tuning in optoelectronic properties of sputter deposited zinc oxide (ZnO)
thin films on ITO coated glass substrate have been investigated as a function of annealing …
thin films on ITO coated glass substrate have been investigated as a function of annealing …
Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications: Part II. PVD and Alternative (Non-PVD and Non-CVD) …
Silicon carbide (SiC x) thin films deposition processes fall primarily into three main
categories:(1) chemical vapor deposition (CVD) and its variants, including plasma enhanced …
categories:(1) chemical vapor deposition (CVD) and its variants, including plasma enhanced …
Development of Pd-Pt functionalized high performance H2 gas sensor based on silicon carbide coated porous silicon for extreme environment applications
Present work demonstrates the hydrogen gas (H 2) sensing characteristics of palladium-
platinum (Pd-Pt) functionalized silicon carbide (SiC) thin film grown on porous silicon (PSi) …
platinum (Pd-Pt) functionalized silicon carbide (SiC) thin film grown on porous silicon (PSi) …
An S-scheme NH2-UiO-66/SiC photocatalyst via microwave synthesis with improved CO2 reduction activity
High CO 2 adsorption capacity and rapid photo-generated carrier separation are the keys to
raising artificial photosynthesis efficiency. Herein, an NH 2-UiO66/SiC composite …
raising artificial photosynthesis efficiency. Herein, an NH 2-UiO66/SiC composite …
Optical and electrical tunability in vertically aligned MoS2 thin films prepared by DC sputtering: Role of film thickness
Insights into the fundamentals of structure-property relations are one of the most important
key parameters, which can be utilized for tailoring material properties such as electrical, and …
key parameters, which can be utilized for tailoring material properties such as electrical, and …
Phonon-assisted optical absorption of SiC polytypes from first principles
Silicon carbide (SiC) is an indirect-gap semiconductor material widely used in electronic and
optoelectronic applications. While experimental measurements of the phonon-assisted …
optoelectronic applications. While experimental measurements of the phonon-assisted …
The role of non-homogeneous barrier on the electrical performance of 15R–SiC Schottky diodes grown by in-situ RF sputtering
In the present work, we have demonstrated the impact of barrier inhomogeneities on the
electrical characteristics of silicon carbide (SiC) based Schottky barrier diodes (SBDs) …
electrical characteristics of silicon carbide (SiC) based Schottky barrier diodes (SBDs) …
[HTML][HTML] A Review of Wide Bandgap Semiconductors: Insights into SiC, IGZO, and Their Defect Characteristics
Q Shangguan, Y Lv, C Jiang - Nanomaterials, 2024 - pmc.ncbi.nlm.nih.gov
Although the irreplaceable position of silicon (Si) semiconductor materials in the field of
information has become a consensus, new materials continue to be sought to expand the …
information has become a consensus, new materials continue to be sought to expand the …
Tuning the wettability of highly transparent Nb2O5 nano-sliced coatings to enhance anti-corrosion property
In the present work, the deposition temperature-dependent optical, wetting and corrosion
properties of niobium oxide (Nb 2 O 5) coatings was investigated. The Nb 2 O 5 thin films …
properties of niobium oxide (Nb 2 O 5) coatings was investigated. The Nb 2 O 5 thin films …
Influence of process parameters and formation of highly c-Axis oriented AlN thin films on mo by reactive sputtering
It is challenging to grow aluminum nitride (AlN) in c-axis orientation on a metal electrode,
primarily due to lattice mismatch and the difference between the coefficients of thermal …
primarily due to lattice mismatch and the difference between the coefficients of thermal …