ZnO has emerged as a promising candidate for optoelectronic and microelectronic
applications, whose development requires greater understanding and control of their …

The polar and piezoelectric nature of the wurtzite structure of ZnO nanowires with a high
aspect ratio at nanoscale dimensions is of high interest for piezotronic and piezoelectric …

Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …

The formation of the Schottky barrier height (SBH) is a complex problem because of the
dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface …

β-Ga 2 O 3 epitaxial thin films were deposited using laser molecular beam epitaxy technique
and oxygen atmosphere in situ annealed in order to reduce the oxygen vacancy …

Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its
nanostructures, holds promise for the development of photonic devices. The recent …

Zinc oxide (ZnO) is a strong luminescent material, as are several polymers. These two
materials have distinct drawbacks and advantages, and they can be combined to form …

Chemical substitution, which can be iso-or heterovalent, is the primary strategy to tailor
material properties. There are various ways how a material can react to substitution …

Abstract One-dimensional (1D) zinc oxide (ZnO) nanostructures have been extensively and
intensively studied for several decades not only for their extraordinary chemical and physical …

Two-dimensional (2D) material-based van der Waals (vdW) heterostructures have recently
attracted much attention because the combined merits of two 2D monolayers enable many …