This paper reviews and compares predictions of the Dutta-Horn model of low-frequency
excess (1/f) noise with experimental results for thin metal films, MOS transistors, and …

This paper reports on gate-all-around silicon nanowire field-effect transistors (FETs) built in
a lateral configuration, which represent the ultimate scaling limit of triple-gate finFET devices …

In this work, the low-frequency noise (LFN) characteristics of hafnium-zirconium oxide (HZO)
ferroelectric field-effect transistors (FeFETs) with and without high-pressure forming gas …

This paper presents the low-frequency noise (LFN) behavior of vertical tunnel FETs (TFETs).
The experimental input characteristics with different source compositions (Si and Ge) and …

III-V materials, such as InGaAs and InP, are highly attractive for high-performance
electronics and optoelectronics owning to their high carrier mobilities and potential for …

In this article, GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect
transistors (MOSHEMTs) fabricated on high-resistivity Si (111) substrates have been …

We investigate the variability of a ferroelectric FET (FEFET) in program operation using low-
frequency noise (LFN) spectroscopy. Contrary to the previous report, LFN characteristics of …

This article presents a comparative low-frequency noise (LFN) characterization of gate-all-
around nanosheet n-channel Si metal-oxide-semiconductor field effect transistors …

This work investigates trap generation in gate stacks of ferroelectric field-effect transistor
(FeFET) with TiN/Hf0. 5Zr0. 5O2/SiOx/Si gate structure during endurance fatigue by using …

Dispersion in accumulation is a widely observed phenomenon in technologically important
InGaAs gate stacks. Two principal different interface defects were proposed as the physical …