Dielectric surface passivation for silicon solar cells: A review

RS Bonilla, B Hoex, P Hamer… - physica status solidi …, 2017 - Wiley Online Library
Silicon wafer solar cells continue to be the leading photovoltaic technology, and in many
places are now providing a substantial portion of electricity generation. Further adoption of …

[HTML][HTML] Metal halide perovskite polycrystalline films exhibiting properties of single crystals

R Brenes, D Guo, A Osherov, NK Noel, C Eames… - Joule, 2017 - cell.com
Metal halide perovskites are generating enormous excitement for use in solar cells and light-
emission applications, but devices still show substantial non-radiative losses. Here, we …

Overcoming C60-Induced Nonradiative Recombination via Interfacial Embedding of BiOBr Flakes in Inverted Perovskite Solar Cells

H Zhang, F Wang, B Li, M Sun, K Li, H Wang… - ACS Energy …, 2023 - ACS Publications
The presence of C60-induced nonradiative recombination tends to deteriorate the overall
efficiency of inverted perovskite solar cells (PSCs). To alleviate this problem, ultrathin BiOBr …

Highly passivated TOPCon bottom cells for perovskite/silicon tandem solar cells

Z Ding, C Kan, S Jiang, M Zhang, H Zhang… - Nature …, 2024 - nature.com
Tunnel oxide passivated contact (TOPCon) silicon solar cells are rising as a competitive
photovoltaic technology, seamlessly blending high efficiency with cost-effectiveness and …

Mechanisms of silicon surface passivation by negatively charged hafnium oxide thin films

A Wratten, SL Pain, D Walker, AB Renz… - IEEE Journal of …, 2022 - ieeexplore.ieee.org
We have studied the mechanisms underpinning effective surface passivation of silicon with
hafnium oxide (HfO 2) thin films grown via atomic layer deposition (ALD). Plasma-enhanced …

Passivation of all-angle black surfaces for silicon solar cells

T Rahman, RS Bonilla, A Nawabjan… - Solar Energy Materials …, 2017 - Elsevier
Optical losses at the front surface of a silicon solar cell have a significant impact on
efficiency, and as such, efforts to reduce reflection are necessary. In this work, a method to …

Charge fluctuations at the Si–SiO2 interface and its effect on surface recombination in solar cells

RS Bonilla, I Al-Dhahir, M Yu, P Hamer… - Solar Energy Materials …, 2020 - Elsevier
Abstract The Si–SiO 2 interface has and will continue to play a major role in the
development of silicon photovoltaic devices. This work presents a detailed examination of …

[HTML][HTML] On the c-Si/SiO2 interface recombination parameters from photo-conductance decay measurements

RS Bonilla, PR Wilshaw - Journal of Applied Physics, 2017 - pubs.aip.org
The recombination of electric charge carriers at semiconductor surfaces continues to be a
limiting factor in achieving high performance optoelectronic devices, including solar cells …

[HTML][HTML] Long term stability of c-Si surface passivation using corona charged SiO2

RS Bonilla, C Reichel, M Hermle, P Hamer… - Applied Surface …, 2017 - Elsevier
Recombination at the semiconductor surface continues to be a major limit to optoelectronic
device performance, in particular for solar cells. Passivation films reduce surface …

Corona charge in SiO2: kinetics and surface passivation for high efficiency silicon solar cells

RS Bonilla, N Jennison, D Clayton-Warwick, KA Collett… - Energy Procedia, 2016 - Elsevier
This manuscript presents a method by which capacitance-voltage measurements can be
used in conjunction with Kelvin-probe measurements to calculate the location of charge …