A review on the artificial neural network applications for small‐signal modeling of microwave FETs
The purpose of this paper is to provide a comprehensive overview of the field‐effect
transistor (FET) small‐signal modeling using artificial neural networks (ANNs). To gain an in …
transistor (FET) small‐signal modeling using artificial neural networks (ANNs). To gain an in …
Neural approach for temperature‐dependent modeling of GaN HEMTs
Gallium nitride high electron‐mobility transistors have gained much interest for high‐power
and high‐temperature applications at high frequencies. Therefore, there is a need to have …
and high‐temperature applications at high frequencies. Therefore, there is a need to have …
A generic and efficient globalized kernel map**-based small-signal behavioral modeling for GaN HEMT
The work reported in this article explores a novel Particle Swarm Optimization (PSO) tuned
Support Vector Regression (SVR) based technique to develop the small-signal behavioral …
Support Vector Regression (SVR) based technique to develop the small-signal behavioral …
Small signal behavioral modeling technique of GaN high electron mobility transistor using artificial neural network: An accurate, fast, and reliable approach
This article reports a comparative study of two artificial neural network structures and
associated variants used to describe and predict the behavior of 2× 200 μm2 GaN high …
associated variants used to describe and predict the behavior of 2× 200 μm2 GaN high …
Genetic algorithm initialized artificial neural network based temperature dependent small‐signal modeling technique for GaN high electron mobility transistors
This paper explores and develops efficient temperature‐dependent small‐signal modeling
approaches for GaN high electron mobility transistors (HEMTs). The multilayer perceptron …
approaches for GaN high electron mobility transistors (HEMTs). The multilayer perceptron …
An accurate and simplified small signal parameter extraction method for GaN HEMT
In this paper, development of a small signal model for 2× 200 μm GaN HEMT based on the
conventional 20‐element model is presented. The proposed model presents a direct …
conventional 20‐element model is presented. The proposed model presents a direct …
Modelling the spice parameters of SOI MOSFET using a combinational algorithm
Progress in the technology of submicron semiconductor device, which makes a short-
channel and quantum effects, having equations of nonlinear modelling, leads to complicated …
channel and quantum effects, having equations of nonlinear modelling, leads to complicated …
Small‐signal modeling of microwave transistors using radial basis function artificial neural network‐comparison of different methods for spread constant determined
J Qi, H Lu, S Yan, R Zhao, D Tan… - … Journal of RF and …, 2022 - Wiley Online Library
This article presents a high‐precision modeling method to build a small signal model of
GaAs pseudomorphic high electron mobility transistor (pHEMT) by using a radial basis …
GaAs pseudomorphic high electron mobility transistor (pHEMT) by using a radial basis …
DC and microwave characteristics of Lg 50 nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications
The DC and microwave characteristics of L g= 50 nm T-gate InAlN/AlN/GaN High Electron
Mobility Transistor (HEMT) on SiC substrate with heavily doped n+ GaN source and drain …
Mobility Transistor (HEMT) on SiC substrate with heavily doped n+ GaN source and drain …
Equivalent small-signal model of InP-based HEMTs with accurate radiation effects characterization
HQ Yun, B Mei, YB Su, F Yang, P Ding… - Journal of Applied …, 2023 - pubs.aip.org
In this paper, an effective equivalent modeling technique has been proposed to describe
small-signal characteristics of InP-based high electron mobility transistors (HEMTs) after …
small-signal characteristics of InP-based high electron mobility transistors (HEMTs) after …