In many leading industrial applications such as aerospace, military, automotive, and deep-
well drilling, extreme temperature environment is the fundamental hindrance to the use of …

This paper reviews different technologies recently developed to push the performance of
GaN-based high electron mobility transistors (HEMTs) into sub-mm wave frequencies. To …

The development of GaN based devices for microwave power electronics at the University of
California, Santa Barbara (UCSB), is reviewed. From 1995 to 2000, the power performance …

Ohmic contacts to AlGaN/GaN heterostructures which have low contact resistance and good
surface morphology are required for the development of commercial high power, high …

We report on the growth of nominally undoped GaN/Al x Ga 1− x N/GaN (x< 0.4) high
mobility heterostructures with N-face or Ga-face polarity on sapphire substrates by plasma …

Gate-drain capacitance and conductance measurements were performed on an Al 0.15 Ga
0.85 N/GaN heterostructure field-effect transistor to study the effects of trap states on …

This letter describes a gate-first AlGaN/GaN high-electron mobility transistor (HEMT) with a
W/high-k dielectric gate stack. In this new fabrication technology, the gate stack is deposited …

Nonalloyed Ohmic contacts on Ga-face n+-Ga N∕ Al Ga N∕ Ga N high electron mobility
transistor (HEMT) structures typically have significant contact resistance to the two …

A study of V/Al/Pt/Au and Ti/Al/Pt/Au contacts to n-Al 0.3 Ga 0.7 N/GaN heterostructures is
presented. Vanadium was chosen as a potential replacement for Ti because V is expected …

A recessed gate high electron mobility transistor (HEMT) has been fabricated with
AlGaN/GaN heterostructure on a sapphire substrate using metalorganic chemical vapor …