2D heterostructures for ubiquitous electronics and optoelectronics: principles, opportunities, and challenges

PV Pham, SC Bodepudi, K Shehzad, Y Liu, Y Xu… - Chemical …, 2022 - ACS Publications
A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …

Infrared photodetectors based on 2D materials and nanophotonics

J Zha, M Luo, M Ye, T Ahmed, X Yu… - Advanced Functional …, 2022 - Wiley Online Library
Abstract 2D materials, such as graphene, transition metal dichalcogenides, black
phosphorus, and tellurium, have been demonstrated to be promising building blocks for the …

Ultrabroadband and High-Detectivity Photodetector Based on WS2/Ge Heterojunction through Defect Engineering and Interface Passivation

D Wu, J Guo, C Wang, X Ren, Y Chen, P Lin, L Zeng… - ACS …, 2021 - ACS Publications
Broadband photodetectors are of great importance for numerous optoelectronic
applications. Two-dimensional (2D) tungsten disulfide (WS2), an important family member of …

Van der Waals epitaxial growth of mosaic‐like 2D platinum ditelluride layers for room‐temperature mid‐infrared photodetection up to 10.6 µm

L Zeng, D Wu, J Jie, X Ren, X Hu, SP Lau… - Advanced …, 2020 - Wiley Online Library
Abstract Mid‐infrared (MIR) photodetection, covering diverse molecular vibrational regions
and atmospheric transmission windows, is vital to civil and military purposes. Versatile use …

Nanowires for UV–vis–IR optoelectronic synaptic devices

X Chen, B Chen, B Jiang, T Gao… - Advanced Functional …, 2023 - Wiley Online Library
Simulating biological synaptic functionalities through artificial synaptic devices opens up an
innovative way to overcome the von Neumann bottleneck at the device level. Artificial …

Fast, Self‐Driven, Air‐Stable, and Broadband Photodetector Based on Vertically Aligned PtSe2/GaAs Heterojunction

LH Zeng, SH Lin, ZJ Li, ZX Zhang… - Advanced Functional …, 2018 - Wiley Online Library
Group‐10 layered transitional metal dichalcogenides including PtS2, PtSe2, and PtTe2 are
excellent potential candidates for optoelectronic devices due to their unique properties such …

Review on III–V semiconductor nanowire array infrared photodetectors

Z Li, Z He, C **, F Zhang, L Huang, Y Yu… - Advanced Materials …, 2023 - Wiley Online Library
In recent years, III–V semiconductor nanowires have been widely investigated for infrared
photodetector applications due to their direct and suitable bandgap, unique optical and …

High detectivity graphene‐silicon heterojunction photodetector

X Li, M Zhu, M Du, Z Lv, L Zhang, Y Li, Y Yang, T Yang… - Small, 2016 - Wiley Online Library
A graphene/n‐type silicon (n‐Si) heterojunction has been demonstrated to exhibit strong
rectifying behavior and high photoresponsivity, which can be utilized for the development of …

Recent developments in the photodetector applications of Schottky diodes based on 2D materials

B Ezhilmaran, A Patra, S Benny… - Journal of Materials …, 2021 - pubs.rsc.org
In recent years, 2D layered materials have emerged as potential candidates in the opto-
electronic field due to their intriguing optical, electrical and mechanical properties …

Integrated mid-infrared sensing and ultrashort lasers based on wafer-level Td-WTe2 Weyl semimetal

D Wu, Z Mo, X Li, X Ren, Z Shi, X Li, L Zhang… - Applied Physics …, 2024 - pubs.aip.org
There is an urgent need for infrared (IR) detection systems with high-level miniaturization
and room-temperature operation capability. The rising star of two-dimensional (2D) …