Tracking the excitation of water molecules in the homogeneous liquid is challenging due to
the ultrafast dissipation of rotational excitation energy through the hydrogen-bonded …

Third-order non-linearities are important because they allow control over light pulses in
ubiquitous high-quality centro-symmetric materials like silicon and silica. Degenerate four …

We have combined ultrafast time-resolved techniques, available at European infrared free-
electron laser facilities (HFML-FELIX and ELBE), for the analysis of intracenter relaxation …

The perturbed free induction decay (PFID) observed in ultrafast infrared spectroscopy was
used to unveil the rates at which different vibrational modes of the same atomic-scale defect …

We report on an optically pumped laser where photons are simultaneously generated by
population inversion and by stimulated Raman scattering in the same active medium …

Electrical properties of defects produced in strongly bismuth-doped silicon by 15 MeV
protons are investigated in detail. Electrical measurements on irradiated samples by means …

The relaxation of electrons bound to bismuth donors in silicon and the effect of uniaxial
stress have been studied using the time-resolved single color pump-probe technique. In …

Experimental results on the observation of terahertz luminescence under optical excitation of
silicon doped with neutral helium-like magnesium donors under photoionization conditions …

We present time-resolved measurements of the relaxation between the orbital states of the
shallow acceptor boron in silicon. The silicon host was enriched Si 28, which exhibits …

The goal of the work presented here was to use cryogenic Scanning Near-field Optical
Microscopy (SNOM), an imaging technique that detects local changes to the dielectric …