Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …

Computing in memory (CIM) could be used to overcome the von Neumann bottleneck and to
provide sustainable improvements in computing throughput and energy efficiency …

Emerging reconfigurable devices are fast gaining popularity in the search for next-
generation computing hardware, while ferroelectric engineering of the do** state in …

Analog hardware accelerators, which perform computation within a dense memory array,
have the potential to overcome the major bottlenecks faced by digital hardware for data …

Ferroelectrics have great potential in the field of nonvolatile memory due to programmable
polarization states by external electric field in nonvolatile manner. However, complementary …

In-memory computing featuring a radical departure from the von Neumann architecture is
promising to substantially reduce the energy and time consumption for data-intensive …

Ferroelectric field effect transistors (FeFETs) are being actively investigated with the
potential for in-memory computing (IMC) over other nonvolatile memories (NVMs). Content …

The Von-Neumann memory wall bottleneck that keeps expanding is mainly caused by the
frequent data transfer between the main memory and the processor. The processing in …

Growth of data eases the way to access the world but requires increasing amounts of energy
to store and process. Neuromorphic electronics has emerged in the last decade, inspired by …

Ternary content addressable memories (TCAMs) represent a form of logic-in-memory and
are currently widely used in routers, caches, and efficient machine learning models. From a …