Recent progress in red light-emitting diodes by III-nitride materials
GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …
same material system. These emitters are expected to be next-generation red, green, and …
Perspective: Toward efficient GaN-based red light emitting diodes using europium do**
While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available,
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …
Enhanced luminescence efficiency in Eu-doped GaN superlattice structures revealed by terahertz emission spectroscopy
Abstract Eu-doped Gallium nitride (GaN) is a promising candidate for GaN-based red light-
emitting diodes, which are needed for future micro-display technologies. Introducing a …
emitting diodes, which are needed for future micro-display technologies. Introducing a …
Realization of red electroluminescence from Ga2O3: Eu/Si based light-emitting diodes
Y Huang, K Saito, T Tanaka, Q Guo - Superlattices and Microstructures, 2021 - Elsevier
Eu doped Ga 2 O 3 film has been grown on n-Si (111) substrate by pulsed laser deposition.
Excellent structural and optical properties of the obtained Ga 2 O 3: Eu film have been …
Excellent structural and optical properties of the obtained Ga 2 O 3: Eu film have been …
Size dependence of quantum efficiency of red emission from GaN: Eu structures for application in micro-LEDs
D Denier Van Der Gon, D Timmerman, Y Matsude… - Optics Letters, 2020 - opg.optica.org
GaN-based micro-LEDs typically suffer from a size-dependent efficiency due to the relatively
long carrier lifetime and sidewall-related recombination effects. We demonstrate that for red …
long carrier lifetime and sidewall-related recombination effects. We demonstrate that for red …
Tuning the valence and concentration of europium and luminescence centers in GaN through co-do** and defect association
K Hoang - Physical Review Materials, 2021 - APS
Defect physics of europium (Eu) doped GaN is investigated using first-principles hybrid
density-functional defect calculations. This includes the interaction between the rare-earth …
density-functional defect calculations. This includes the interaction between the rare-earth …
Excitation Efficiency and Limitations of the Luminescence of Ions in
The excitation efficiency and external luminescence quantum efficiency of trivalent Eu 3+
ions doped into gallium nitride (Ga N) is studied under optical and electrical excitation. For …
ions doped into gallium nitride (Ga N) is studied under optical and electrical excitation. For …
Low driven voltage red LEDs using Eu-doped Ga2O3 films on GaAs
Abstract Red LEDs based on Eu: Ga 2 O 3/GaAs heterojunctions were fabricated using a
pulsed laser deposition method. Eu-related luminescence originating from the 5 D 0–7 F 2 …
pulsed laser deposition method. Eu-related luminescence originating from the 5 D 0–7 F 2 …
Closing the yellow gap with Eu-and Tb-doped GaN: one luminescent host resulting in three colours
C Braun, L Mereacre, Z Chen, A Slabon - Scientific Reports, 2022 - nature.com
Gallium nitride (GaN) is a key material when it comes to light-emitting diodes (LEDs) and
has pushed the LED revolution in lighting and displays. The concept of down-conversion of …
has pushed the LED revolution in lighting and displays. The concept of down-conversion of …
Charge state of vacancy defects in Eu-doped GaN
Eu ions have been doped into GaN in order to achieve red luminescence under current
injection, where coupling between the Eu ions and intrinsic defects such as vacancies are …
injection, where coupling between the Eu ions and intrinsic defects such as vacancies are …