Recent progress in red light-emitting diodes by III-nitride materials

D Iida, K Ohkawa - Semiconductor Science and Technology, 2021 - iopscience.iop.org
GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …

Perspective: Toward efficient GaN-based red light emitting diodes using europium do**

B Mitchell, V Dierolf, T Gregorkiewicz… - Journal of Applied …, 2018 - pubs.aip.org
While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available,
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …

Enhanced luminescence efficiency in Eu-doped GaN superlattice structures revealed by terahertz emission spectroscopy

F Murakami, A Takeo, B Mitchell, V Dierolf… - Communications …, 2023 - nature.com
Abstract Eu-doped Gallium nitride (GaN) is a promising candidate for GaN-based red light-
emitting diodes, which are needed for future micro-display technologies. Introducing a …

Realization of red electroluminescence from Ga2O3: Eu/Si based light-emitting diodes

Y Huang, K Saito, T Tanaka, Q Guo - Superlattices and Microstructures, 2021 - Elsevier
Eu doped Ga 2 O 3 film has been grown on n-Si (111) substrate by pulsed laser deposition.
Excellent structural and optical properties of the obtained Ga 2 O 3: Eu film have been …

Size dependence of quantum efficiency of red emission from GaN: Eu structures for application in micro-LEDs

D Denier Van Der Gon, D Timmerman, Y Matsude… - Optics Letters, 2020 - opg.optica.org
GaN-based micro-LEDs typically suffer from a size-dependent efficiency due to the relatively
long carrier lifetime and sidewall-related recombination effects. We demonstrate that for red …

Tuning the valence and concentration of europium and luminescence centers in GaN through co-do** and defect association

K Hoang - Physical Review Materials, 2021 - APS
Defect physics of europium (Eu) doped GaN is investigated using first-principles hybrid
density-functional defect calculations. This includes the interaction between the rare-earth …

Excitation Efficiency and Limitations of the Luminescence of Ions in

D Timmerman, B Mitchell, S Ichikawa, J Tatebayashi… - Physical Review …, 2020 - APS
The excitation efficiency and external luminescence quantum efficiency of trivalent Eu 3+
ions doped into gallium nitride (Ga N) is studied under optical and electrical excitation. For …

Low driven voltage red LEDs using Eu-doped Ga2O3 films on GaAs

Z Chen, D Guo, P Li, Z Chen, W Tang… - Applied Physics …, 2019 - iopscience.iop.org
Abstract Red LEDs based on Eu: Ga 2 O 3/GaAs heterojunctions were fabricated using a
pulsed laser deposition method. Eu-related luminescence originating from the 5 D 0–7 F 2 …

Closing the yellow gap with Eu-and Tb-doped GaN: one luminescent host resulting in three colours

C Braun, L Mereacre, Z Chen, A Slabon - Scientific Reports, 2022 - nature.com
Gallium nitride (GaN) is a key material when it comes to light-emitting diodes (LEDs) and
has pushed the LED revolution in lighting and displays. The concept of down-conversion of …

Charge state of vacancy defects in Eu-doped GaN

B Mitchell, N Hernandez, D Lee, A Koizumi, Y Fujiwara… - Physical Review B, 2017 - APS
Eu ions have been doped into GaN in order to achieve red luminescence under current
injection, where coupling between the Eu ions and intrinsic defects such as vacancies are …