After 50 years of Moore's Law, Si CMOS, the mainstream logic technology, is on a course of
diminishing returns. The use of new semiconductor channel materials with improved …

CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the
promising devices for high performance and low power integrated systems in the future …

GaSb inversion-mode PMOSFETs with atomic-layer-deposited (ALD) Al 2 O 3 as gate
dielectric are demonstrated. A 0.75-μm-gate-length device has a maximum drain current of …

The development of methods to synthesize and physically manipulate extremely thin, single-
crystalline inorganic semiconductor materials, so-called nanomembranes, has led to an …

This letter introduces a novel alcohol-based digital etch technique for III-V FinFET and
nanowire MOSFET fabrication. The new technique addresses the limitations of the …

Molecular beam epitaxy deposited rare-earth oxide of Y 2 O 3 has effectively passivated
GaSb, leading to low interfacial trap densities of (1–4)× 10 12 cm− 2 eV− 1 across the …

High-k/InAs interfaces have been manufactured using InAs surface oxygen termination and
low temperature atomic layer deposition of HfO 2. Capacitance–voltage (C–V) curves revert …

An interface characterization of p-type GaSb metal-oxide-semiconductor (MOS) structures
has been performed with Al-first and Hf-first HfAlO gate dielectrics deposited via atomic layer …

The highly reactive GaSb surface was passivated with a thin InAs layer to limit interface trap
state density (Dit) at the III–V/high-k oxide interface. This InAs surface was subjected to …

We have systematically studied the impact of interfacial InAs layers on Al 2 O 3/GaSb metal-
oxide-semiconductor (MOS) interface properties. The interfacial InAs layers improved the …