Low Power Stochastic Neurons From SiO2-Based Bilayer Conductive Bridge Memristors for Probabilistic Spiking Neural Network Applications—Part I: Experimental …
P Bousoulas, C Tsioustas, J Hadfield… - … on Electron Devices, 2022 - ieeexplore.ieee.org
The development of low-power neurons with an intrinsic degree of stochasticity is
considered quite important for the emulation of the respective probabilistic procedures that …
considered quite important for the emulation of the respective probabilistic procedures that …
Spectroscopic Analysis for Harnessing the Quality and Potential of Gemstones for Small and Medium‐Sized Enterprises (SMEs)
I Ahmad, SH Serbaya, A Rizwan… - Journal of …, 2021 - Wiley Online Library
Introduction of modern technologies and methods and quality analysis for the gemstone
industry are the main strategic initiatives of the Small and Medium Development Authority …
industry are the main strategic initiatives of the Small and Medium Development Authority …
Preparation of h‐BN microspheres for nanocomposites with high through‐plane thermal conductivity
In recent times, electronics have been increasingly minimized, and hence, heat dissipation
has become essential. Owing to its high thermal conductivity and superior electrical …
has become essential. Owing to its high thermal conductivity and superior electrical …
High-selectivity NIR amorphous silicon-based plasmonic photodetector at room temperature
This study employed amorphous materials to construct a Near-Infrared (NIR) photodetector,
enabling optical sensing over a non-crystalline platform. Utilizing an Au/a-Si Schottky …
enabling optical sensing over a non-crystalline platform. Utilizing an Au/a-Si Schottky …
[HTML][HTML] High-pressure sputtering deposition and in situ plasma oxidation of TiOx thin films as electron selective contact for photovoltaic applications
In this article, we show the structural, optical, and electrical characterization of TiO x
deposited by the unconventional technique of High-Pressure Sputtering (HPS). This …
deposited by the unconventional technique of High-Pressure Sputtering (HPS). This …
Near-zero transmittance loss, highly durable, flexible, transparent electrode with an ultrathin Ag nanoporous structure
Recent advances in state-of-the-art optoelectrical and photovoltaic devices have
necessitated further improvements in the efficiency of transparent electrodes by …
necessitated further improvements in the efficiency of transparent electrodes by …
Stress-induced phase-alteration in solution processed indium selenide thin films during annealing
This article demonstrates the successful synthesis of indium selenide thin films by a spin
coating method in air using thiol-amine cosolvents. The synthesized films encountered a …
coating method in air using thiol-amine cosolvents. The synthesized films encountered a …
Polyphenylene Oxide Film Sandwiched between SiO2 Layers for High-Temperature Dielectric Energy Storage
Z Dai, J Jia, S Ding, Y Wang, X Meng… - … Applied Materials & …, 2024 - ACS Publications
The commercial capacitor using dielectric biaxially oriented polypropylene (BOPP) can work
effectively only at low temperatures (less than 105° C). Polyphenylene oxide (PPO), with …
effectively only at low temperatures (less than 105° C). Polyphenylene oxide (PPO), with …
Recovery of valuable materials from phosphorus slag using nitric acid leaching followed by precipitation method
Z Hassankhani-Majd, M Anbia - Resources, Conservation and Recycling, 2021 - Elsevier
PS, the principal waste of phosphorus production, comprises some elements such as Si, Ca,
Fe, Al, rare earth metals (REMs), etc. Due to the high annual production volumes of PS, it is …
Fe, Al, rare earth metals (REMs), etc. Due to the high annual production volumes of PS, it is …
Microstructured antireflective encapsulant on concentrator solar cells
Microstructured antireflective coatings (ARCs) can reduce reflection losses over a wide
range of incidence angles when applied to the surface of a high‐efficiency III‐V photovoltaic …
range of incidence angles when applied to the surface of a high‐efficiency III‐V photovoltaic …