Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse
classes of materials and devices using electric currents, leading to novel spintronic memory …

Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast
operation and high endurance but faces challenges such as low switching current, reliable …

In recent years, magnetic RAMs have stimulated considerable research interest due to its
high area-density and low leakage-power with comparable speed that makes it a strong …

We demonstrate in-plane field-free-switching spin-orbit torque (SOT) magnetic tunnel
junction (MTJ) devices that are capable of low switching current density, fast speed, high …

We demonstrate reliable sub-nanosecond switching in two-terminal spin transfer torque
magnetoresistive random access memory (STT-MRAM) devices by using double spin …

Handbook of Magnetic Materials, Volume 26, covers the expansion of magnetism over the
last few decades and its applications in research, notably the magnetism of several classes …

Realizing robust field-free current-induced switching of perpendicular magnetization is of
utmost importance to make spin–orbit torque (SOT) magnetic random-access memory …

We have successfully demonstrated a 1 Kb spin-orbit torque (SOT) magnetic random-access
memory (MRAM) multiplexer (MUX) array with remarkable performance. The 1 Kb MUX …

Applications of artificial intelligence (AI) necessitate AI hardware accelerators able to
efficiently process data-intensive and computation-intensive AI workloads. AI accelerators …

Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is a non-volatile
memory technology with a unique combination of speed, endurance, density and ease of …