A subthreshold analytical model for Dual Material Double Gate Junctionless Tunnel FET
(DMDG JLTFET) is developed. To analyze the behavior of short channel device, relevant …

The 2D analytical models for electrostatic potential, threshold voltage, subthreshold swing,
Drain Induced Barrier Lowering (DIBL) and drain current of the Dual Material Double Gate …

We investigate the performance of a dielectric modulated dual-metal double-gate with low-
k/high-k oxide stack junctionless MOSFET (DM-DG-LK/HK-S JL-MOSFET) based sensor …

Junctionless double gate (JLDG) MOSFET in sub nano meter regime has been the preferred
choice for researchers as the leakage current in a JLDG MOSFET is significantly less …

This paper presents an analytical subthreshold model for surface potential and threshold
voltage of a triple‐material double‐gate (DG) metal–oxide–semiconductor field‐effect …

A 2D analytical model for transconductance, Sub-threshold current and Sub-threshold swing
for Triple Material Surrounding Gate MOSFET (TMSG) is presented in this paper. Based on …

In this work, analytical models of subthreshold current and subthreshold swing of short
channel ultra-thin double gate-all-around (DGAA) MOSFETs including quantum confinement …

A two-dimensional analytical model is proposed in this paper for surface potential and drain
current on Triple Material Surrounding Gate Heterojunction Tunnel Field Effect Transistor …

This proposed work covers the effect of dual halo structure with dual dielectric. A 2-D
analytical model for potential distribution, threshold voltage, electric field and sub-threshold …

The channel modulated junctionless gate all around (CM-JL-GAA) MOSFET improves the
SCE's with high graded do** of the channel region. Temperature effects on electrostatic …