The fundamental surface science of wurtzite gallium nitride
VM Bermudez - Surface Science Reports, 2017 - Elsevier
A review is presented that covers the experimental and theoretical literature relating to the
preparation, electronic structure and chemical and physical properties of the surfaces of the …
preparation, electronic structure and chemical and physical properties of the surfaces of the …
Growth of III-nitrides by molecular beam epitaxy: Unconventional substrates for conventional semiconductors
III-nitrides are intriguing materials with the potential to be used in various interdisciplinary
applications, including high-power optoelectronics, energy conversion, green technologies …
applications, including high-power optoelectronics, energy conversion, green technologies …
Gallium nitride nanowire as a linker of molybdenum sulfides and silicon for photoelectrocatalytic water splitting
The combination of earth-abundant catalysts and semiconductors, for example,
molybdenum sulfides and planar silicon, presents a promising avenue for the large-scale …
molybdenum sulfides and planar silicon, presents a promising avenue for the large-scale …
ZnO/GaN heterojunction based self-powered photodetectors: influence of interfacial states on UV sensing
Abstract Gallium Nitride (GaN) and Zinc Oxide (ZnO) are well established semiconductors
with their heterostructures opening avenues for the future of next generation sensing and …
with their heterostructures opening avenues for the future of next generation sensing and …
Current Transport and Band Alignment Study of MoS2/GaN and MoS2/AlGaN Heterointerfaces for Broadband Photodetection Application
Gallium nitride (GaN) and aluminium gallium nitride (AlGaN) are promising materials for
optoelectronics because of their direct band gap and high electron mobility. However, their …
optoelectronics because of their direct band gap and high electron mobility. However, their …
Interface dipole and band bending in the hybrid heterojunction
Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel
paths toward nanoelectronic devices with engineered features. Here, we study the electronic …
paths toward nanoelectronic devices with engineered features. Here, we study the electronic …
Ultralow voltage GaN vacuum nanodiodes in air
The III-nitride semiconductors have many attractive properties for field-emission vacuum
electronics, including high thermal and chemical stability, low electron affinity, and high …
electronics, including high thermal and chemical stability, low electron affinity, and high …
[HTML][HTML] Nanoscale air channel devices-inheritance and breakthrough of vacuum tube
B Chen, L Fan, J Bi, Z Li, Z Xu, S Majumdar - Nano Materials Science, 2024 - Elsevier
The nanoscale air channel device (NACD) has recently gained significant attention as a
novel vacuum electronic that can be fabricated through nanofabrication technologies. Here …
novel vacuum electronic that can be fabricated through nanofabrication technologies. Here …
Pit assisted oxygen chemisorption on GaN surfaces
A comprehensive analysis of oxygen chemisorption on epitaxial gallium nitride (GaN) films
grown at different substrate temperatures via RF-molecular beam epitaxy was carried out …
grown at different substrate temperatures via RF-molecular beam epitaxy was carried out …
Surface functionalization of gallium nitride for biomedical implant applications
GaN is an aqueous and chemically stable material that has demonstrated biocompatibility
with potential in biomedical engineering and offers enormous opportunities to tailor its …
with potential in biomedical engineering and offers enormous opportunities to tailor its …