Recent progress in ammonothermal technology of bulk GaN growth in basic environment is
presented and discussed in this paper. This method enables growth of two-inch in diameter …

Ammonothermal synthesis is a method for synthesis and crystal growth suitable for a large
range of chemically different materials, such as nitrides (eg, GaN, AlN), amides (eg, LiNH2 …

Dislocations that cause a reverse leakage current in vertical pn diodes on a GaN free-
standing substrate were investigated. Under a high reverse bias, dot-like leakage spots …

A simple structure with high breakdown voltage and a low leakage current of a vertical GaN
p–n diode on a GaN free-standing substrate is demonstrated. We describe a vertical p–n …

One of the main challenges in the development of wide bandgap semiconductor devices is
to understand the behavior of defects and avoid their harm. Using density-functional theory …

A vertical p–n diode with a simple edge termination structure on a GaN free-standing
substrate is demonstrated. The edge of this device is terminated simply by etching a drift …

Nitrides represent an intriguing class of functional materials with a broad range of
application fields. Within the past decade, the ammonothermal method became increasingly …

Ammonothermal GaN growth using a novel apparatus has been performed on c-plane, m-
plane, and semipolar seed crystals with diameters between 5 mm and 2 in. to thicknesses of …

In this contribution, first synthesis of semiconducting ZnSiN2 and ZnGeN2 from solution is
reported with supercritical ammonia as solvent and KNH2 as ammonobasic mineralizer. The …

We are presenting some physical and chemical basis of ammonothermal method of bulk
gallium nitride (GaN) synthesis in ammonobasic route. The substrates of polar, non‐polar …