III–V nanowires and nanowire optoelectronic devices
III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …
technology with good functionality, superior performance, high integration ability and low …
Interface dynamics and crystal phase switching in GaAs nanowires
Controlled formation of non-equilibrium crystal structures is one of the most important
challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying …
challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying …
[BOOK][B] Nucleation theory and growth of nanostructures
VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
Understanding the vapor–liquid–solid growth and composition of ternary III–V nanowires and nanowire heterostructures
VG Dubrovskii - Journal of Physics D: Applied Physics, 2017 - iopscience.iop.org
Based on the recent achievements in vapor–liquid–solid (VLS) synthesis, characterization
and modeling of ternary III–V nanowires and axial heterostructures within such nanowires …
and modeling of ternary III–V nanowires and axial heterostructures within such nanowires …
A general approach for sharp crystal phase switching in InAs, GaAs, InP, and GaP nanowires using only group V flow
III–V-based nanowires usually exhibit random mixtures of wurtzite (WZ) and zinc blende (ZB)
crystal structure, and pure crystal phase wires represent the exception rather than the rule. In …
crystal structure, and pure crystal phase wires represent the exception rather than the rule. In …
Axially lattice-matched wurtzite/rock-salt GaAs/Pb1−xSnxTe nanowires
We investigate the full and half-shells of Pb1− x Sn x Te topological crystalline insulator
deposited by molecular beam epitaxy on the sidewalls of wurtzite GaAs nanowires (NWs) …
deposited by molecular beam epitaxy on the sidewalls of wurtzite GaAs nanowires (NWs) …
In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth
Semiconductor nanowires offer the opportunity to incorporate novel structures and
functionality into electronic and optoelectronic devices. A clear understanding of the …
functionality into electronic and optoelectronic devices. A clear understanding of the …
Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress
Many efficient light-emitting devices and photodetectors are based on semiconductors with,
respectively, a direct or indirect bandgap configuration. The less known pseudodirect …
respectively, a direct or indirect bandgap configuration. The less known pseudodirect …
Bistability of contact angle and its role in achieving quantum-thin self-assisted GaAs nanowires
Achieving quantum confinement by bottom-up growth of nanowires has so far been limited
to the ability of obtaining stable metal droplets of radii around 10 nm or less. This is within …
to the ability of obtaining stable metal droplets of radii around 10 nm or less. This is within …
Development of growth theory for vapor–liquid–solid nanowires: contact angle, truncated facets, and crystal phase
VG Dubrovskii - Crystal Growth & Design, 2017 - ACS Publications
This article tries to circumvent the fundamental uncertainty in the contact angle of droplets
catalyzing vapor–liquid–solid nanowires. Based entirely on surface energetic grounds, our …
catalyzing vapor–liquid–solid nanowires. Based entirely on surface energetic grounds, our …