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Thermal reliability prediction and analysis for high-density electronic systems based on the Markov process
Y Wan, H Huang, D Das, M Pecht - Microelectronics Reliability, 2016 - Elsevier
Thermal-mechanical fatigue is one of the main failure modes for electronic systems,
particularly for high-density electronic systems with high-power components. Thermal …
particularly for high-density electronic systems with high-power components. Thermal …
A comprehensive analysis of LDMOS transistors for analog applications under γ-radiation
S Routh, RK Baruah - Microelectronics Reliability, 2023 - Elsevier
Abstract LDMOS (laterally-diffused-metal-oxide-semiconductor) technology has been
studied rigorously for high power and high voltage applications in communication systems …
studied rigorously for high power and high voltage applications in communication systems …
Characterization of alterations on power MOSFET devices under extreme electro-thermal fatigue
D Martineau, T Mazeaud, M Legros, P Dupuy… - Microelectronics …, 2010 - Elsevier
Extreme electro-thermal fatigue tests on power MOSFET-based switches for automotive
applications have been performed in order to pinpoint their failure mechanisms. Contrary to …
applications have been performed in order to pinpoint their failure mechanisms. Contrary to …
Characterization and modelling of ageing failures on power MOSFET devices
B Khong, M Legros, P Tounsi, P Dupuy… - Microelectronics …, 2007 - Elsevier
A method based on the failure analysis of power MOSFET devices tested under extreme
electrothermal fatigue is proposed. Failure modes are associated to several structural …
electrothermal fatigue is proposed. Failure modes are associated to several structural …
Characterization of ageing failures on power MOSFET devices by electron and ion microscopies
D Martineau, T Mazeaud, M Legros, P Dupuy… - Microelectronics …, 2009 - Elsevier
Extreme electro-thermal fatigue tests have been performed to failure on power MOSFET
devices that were later observed using electron and ion microcopy. At variance with devices …
devices that were later observed using electron and ion microcopy. At variance with devices …
Evaluation of hot-electron effects on critical parameter drifts in power RF LDMOS transistors
MA Belaïd, K Daoud - Microelectronics Reliability, 2010 - Elsevier
This paper presents a synthesis of hot-electron effects on power RF LDMOS performances,
after accelerated ageing tests with electrical and/or thermal stress. Which can modify and …
after accelerated ageing tests with electrical and/or thermal stress. Which can modify and …
Optimal Layout and Overheat Monitoring for Components of Highly Reliable Relay Protection Equipment
L **, Z Zhou, R Zhan, G Yang, Y Zhang - IEEE Access, 2023 - ieeexplore.ieee.org
Effective thermal management measures are of great significance for improving the
reliability of relay protection equipment. Firstly, the paper establishes a temperature …
reliability of relay protection equipment. Firstly, the paper establishes a temperature …
RF performance reliability of power N‐LDMOS under pulsed‐RF aging life test in radar application S‐band
M Ali Belaïd, A Almusallam… - IET Circuits, Devices & …, 2020 - Wiley Online Library
This study presents firstly, experimental results through an innovative reliability bench of
pulsed RF life test in a radar application for device lifetime under pulse conditions, then the …
pulsed RF life test in a radar application for device lifetime under pulse conditions, then the …
[HTML][HTML] The analyses of dynamic response and reliability for failure-dependent stochastic micro-resonator with thermoelastic coupling effects
B Yan, J Ma, D Wu, P Wriggers - Applied Mathematical Modelling, 2020 - Elsevier
A crucial measure for the design of high-performance micro-resonators is to consider the
randomness of structural parameters when analyzing the structural system reliability. In this …
randomness of structural parameters when analyzing the structural system reliability. In this …
[HTML][HTML] Study of impact ionization effect on power RF N-LDMOS transistor after thermal pulsed RF life test
MA Belaid - Case Studies in Thermal Engineering, 2022 - Elsevier
This paper focuses on exploring the correlation between electrical parameters shift of a
power RF N-LDMOS transistor and the failure phenomenon that appeared after the …
power RF N-LDMOS transistor and the failure phenomenon that appeared after the …