Memory effects in complex materials and nanoscale systems

YV Pershin, M Di Ventra - Advances in Physics, 2011 - Taylor & Francis
Memory effects are ubiquitous in nature and are particularly relevant at the nanoscale where
the dynamical properties of electrons and ions strongly depend on the history of the system …

TiO2-based memristors and ReRAM: materials, mechanisms and models (a review)

E Gale - Semiconductor Science and Technology, 2014 - iopscience.iop.org
The memristor is the fundamental nonlinear circuit element, with uses in computing and
computer memory. Resistive Random Access Memory (ReRAM) is a resistive switching …

ISAAC: A convolutional neural network accelerator with in-situ analog arithmetic in crossbars

A Shafiee, A Nag, N Muralimanohar… - ACM SIGARCH …, 2016 - dl.acm.org
A number of recent efforts have attempted to design accelerators for popular machine
learning algorithms, such as those involving convolutional and deep neural networks (CNNs …

[HTML][HTML] Challenges in materials and devices for resistive-switching-based neuromorphic computing

J Del Valle, JG Ramírez, MJ Rozenberg… - Journal of Applied …, 2018 - pubs.aip.org
This tutorial describes challenges and possible avenues for the implementation of the
components of a solid-state system, which emulates a biological brain. The tutorial is …

Memristor-based memory: The sneak paths problem and solutions

MA Zidan, HAH Fahmy, MM Hussain, KN Salama - Microelectronics journal, 2013 - Elsevier
In this paper, we investigate the read operation of memristor-based memories. We analyze
the sneak paths problem and provide a noise margin metric to compare the various …

MRL—Memristor ratioed logic

S Kvatinsky, N Wald, G Satat, A Kolodny… - … Networks and their …, 2012 - ieeexplore.ieee.org
Memristive devices are novel structures, developed primarily as memory. Another interesting
application for memristive devices is logic circuits. In this paper, MRL (Memristor Ratioed …

In-memory data parallel processor

D Fujiki, S Mahlke, R Das - ACM SIGPLAN Notices, 2018 - dl.acm.org
Recent developments in Non-Volatile Memories (NVMs) have opened up a new horizon for
in-memory computing. Despite the significant performance gain offered by computational …

Crossbar RRAM arrays: Selector device requirements during read operation

J Zhou, KH Kim, W Lu - IEEE Transactions on Electron Devices, 2014 - ieeexplore.ieee.org
Passive crossbar resistive random access memory (RRAM) arrays require select devices
with nonlinear IV characteristics to address the sneak-path problem. Here, we present a …

A stacked memory device on logic 3D technology for ultra-high-density data storage

J Kim, AJ Hong, SM Kim, KS Shin, EB Song… - …, 2011 - iopscience.iop.org
We have demonstrated, for the first time, a novel three-dimensional (3D) memory chip
architecture of stacked-memory-devices-on-logic (SMOL) achieving up to 95% of cell-area …

Dynamical properties and design analysis for nonvolatile memristor memories

Y Ho, GM Huang, P Li - … Transactions on Circuits and Systems I …, 2010 - ieeexplore.ieee.org
Novel nonvolatile universal memory technology is essential for providing required storage
for nanocomputing. As a potential contender for the next-generation memory, the recently …