2D Xenes: optical and optoelectronic properties and applications in photonic devices
In recent years, tremendous attention has been paid to the investigation of single‐element
2D materials. These 2D materials mainly consist of elements from group IV and group V …
2D materials. These 2D materials mainly consist of elements from group IV and group V …
High-Performance and Low-Power Transistors Based on Anisotropic Monolayer β-
Two-dimensional (2D) semiconductors offer a promising prospect for high-performance and
energy-efficient devices especially in the sub-10-nm regime. Inspired by the successful …
energy-efficient devices especially in the sub-10-nm regime. Inspired by the successful …
Transport properties of 5-nm tunnel field-effect transistor for high-performance switches decorated with blue phosphorene and transition metals
XD Huang, Q Liu, HQ **e, XQ Deng… - … on Electron Devices, 2023 - ieeexplore.ieee.org
Enhancing the band-to-band tunneling (BTBT) is the most effective method to improve the
performance of the tunnel field effect transistors (TFETs). In this article, the transport …
performance of the tunnel field effect transistors (TFETs). In this article, the transport …
Enhanced interband tunneling in two-dimensional tunneling transistors through anisotropic energy dispersion
The unsatisfactory transmission probability in tunneling junction is a major challenge that
restricts the performance and scaling of next-generation nanodevices, such as the tunnel …
restricts the performance and scaling of next-generation nanodevices, such as the tunnel …
Suppressing Thermal Tail by Dirac States and High Density of States in Two-Dimensional Ag2S toward Low-Power Electronics
To further reduce power dissipation, suppressing the subthreshold swing (SS) to overcome
the physical limit of 60 mV dec–1 is demanded in metal-oxide-semiconductor field effect …
the physical limit of 60 mV dec–1 is demanded in metal-oxide-semiconductor field effect …
Extending channel scaling limit of p-MOSFETs through antimonene with heavy effective mass and high density of state
Conventional silicon-based transistor downscaling is approaching its physical limits, and
thus additional novel solutions are urgently desired to address this issue. Herein, we show …
thus additional novel solutions are urgently desired to address this issue. Herein, we show …
Two-Dimensional ZrS2 and HfS2 for Making Sub-10 nm High-Performance P-Type Transistors
X Hu, Y Huang, H Qu, Y Ye… - The Journal of Physical …, 2024 - ACS Publications
Two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors have been
recognized as reliable candidates for future sub-10 nm physical gate length field-effect …
recognized as reliable candidates for future sub-10 nm physical gate length field-effect …
Atomistic Study of the Bandgap Engineering of Two-Dimensional Silicon Carbide by Hydrogenation
HT Thu Tran, PM Nguyen, H Van Nguyen… - ACS …, 2023 - ACS Publications
This work studied hydrogen adsorption by a two-dimensional silicon carbide using a
combined molecular dynamics and density functional theory approach. The geometrical …
combined molecular dynamics and density functional theory approach. The geometrical …
Two-dimensional monolayer B2P6 with anisotropic elastic properties and carrier mobility
H Zhang, ZH Yue, FS Meng - Vacuum, 2022 - Elsevier
A novel two-dimensional (2D) monolayer B 2 P 6 allotrope is proposed by the first-principles
calculations. The monolayer B 2 P 6 is demonstrated as stable by the combination of …
calculations. The monolayer B 2 P 6 is demonstrated as stable by the combination of …
Band and optical properties of arsenene and antimonene lateral heterostructure by first-principles calculations
W Li, X Fang, D Wang, F Tian, H Wang, D Fang… - Physica E: Low …, 2021 - Elsevier
Construction of heterostructures can circumvent the shortcomings of 2D material
components and has potential for applications in optoelectronic devices. Therefore, further …
components and has potential for applications in optoelectronic devices. Therefore, further …