Fermi level pinning dependent 2D semiconductor devices: challenges and prospects

X Liu, MS Choi, E Hwang, WJ Yoo, J Sun - Advanced Materials, 2022 - Wiley Online Library
Motivated by the high expectation for efficient electrostatic modulation of charge transport at
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …

Fermi-level depinning of 2D transition metal dichalcogenide transistors

RS Chen, G Ding, Y Zhou, ST Han - Journal of Materials Chemistry C, 2021 - pubs.rsc.org
Recently, mainstream silicon (Si)-based materials and complementary metal oxide
semiconductor (CMOS) technology have been used in develo** extremely tiny sized (of a …

Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics

A Varghese, D Saha, K Thakar, V **dal, S Ghosh… - Nano …, 2020 - ACS Publications
Pn heterojunctions comprising layered van der Waals (vdW) semiconductors have been
used to demonstrate current-rectifiers, photodetectors, and photovoltaic devices. However, a …

Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS2

K Intonti, E Faella, A Kumar, L Viscardi… - … Applied Materials & …, 2023 - ACS Publications
The electrical behavior and the photoresponse of rhenium disulfide field-effect transistors
(FETs) have been widely studied; however, only a few works have investigated the …

1T' RexMo1−xS2–2H MoS2 Lateral Heterojunction for Enhanced Hydrogen Evolution Reaction Performance

HTT Nguyen, LA Adofo, SH Yang… - Advanced Functional …, 2023 - Wiley Online Library
The imperfect interfaces between 2D transition metal dichalcogenides (TMDs) are suitable
for boosting the hydrogen evolution reaction (HER) during water electrolysis. Here, the …

Polarization-perceptual anisotropic two-dimensional ReS 2 neuro-transistor with reconfigurable neuromorphic vision

D **e, K Yin, ZJ Yang, H Huang, X Li, Z Shu… - Materials …, 2022 - pubs.rsc.org
Polarization is a common and unique phenomenon in nature, which reveals more
camouflage features of objects. However, current polarization-perceptual devices based on …

Ultrasensitive and Broad‐Spectrum Photodetectors Based on InSe/ReS2 Heterostructure

H Ma, Y **ng, J Han, B Cui, T Lei, H Tu… - Advanced Optical …, 2022 - Wiley Online Library
Photogating effect based on vertical structure of 2D materials allows for the realization of a
highly sensitive photodetector. A highly sensitive and broad‐spectrum (365–965 nm) …

2D rhenium dichalcogenides: from fundamental properties to recent advances in photodetector technology

PP Satheesh, HS Jang, B Pandit… - Advanced Functional …, 2023 - Wiley Online Library
Van der Waals (vdW) materials of transition metal dichalcogenides (TMD) family with
semiconducting properties are currently at the forefront of research in the field of …

Multifunctional van der Waals broken‐gap heterojunction

PK Srivastava, Y Hassan, Y Gebredingle, J Jung… - Small, 2019 - Wiley Online Library
The finite energy band‐offset that appears between band structures of employed materials
in a broken‐gap heterojunction exhibits several interesting phenomena. Here, by employing …

Novel Gas Sensing Approach: ReS2/Ti3C2Tx Heterostructures for NH3 Detection in Humid Environments

S Gasso, J Carrier, D Radu, CY Lai - ACS sensors, 2024 - ACS Publications
Continuous monitoring of ammonia (NH3) in humid environments poses a notable
challenge for gas sensing applications because of its effect on sensor sensitivity. The …