Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …

In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs)
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …

Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation
devices as they can serve as a synaptic device for neuromorphic implementation and a one …

Ferroelectric field effect transistors (FeFETs) are being actively investigated with the
potential for in-memory computing (IMC) over other nonvolatile memories (NVMs). Content …

Data transfer between a processor and memory frequently represents a bottleneck with
respect to improving application-level performance. Computing in memory (CiM), where …

The HfO 2-based ferroelectric field effect transistor (FeFET) with a metal/ferroelectric/
insulator/semiconductor (MFIS) gate stack is currently being considered as a possible …

Among the beyond-complementary metal-oxide-semiconductor (CMOS) devices being
explored, ferroelectric field-effect transistors (FeFETs) are considered as one of the most …

Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received
much attention due to their technological potential in terms of scalability, high-speed, and …

Ferroelectric hafnium oxide (HfO 2) has been extensively studied for over a decade,
especially as a CMOS-compatible material in emerging memory applications. Most recently …

In this paper, we consider devices, circuits, and systems comprised of transistors with
integrated ferroelectrics. Said structures are actively being considered by various …