For more than four decades, transistors have been shrinking exponentially in size, and
therefore the number of transistors in a single microelectronic chip has been increasing …

Nanowires are considered building blocks for the ultimate scaling of MOS transistors,
capable of pushing devices until the most extreme boundaries of miniaturization thanks to …

This review summarises the recent advances in the field of silicon nanowire electronics from
bottom-up assembled materials. The aim is to draw a comparison between bottom-up and …

Carbon nanotube field-effect transistors (CNTFETs) and their growing applications are
becoming part of modern nanoelectronics, which is in urgent need for high-performance …

The junctionless transistor consists of a piece of uniformly doped semiconductor with a gate
placed between the source and drain contacts and is, therefore, the simplest transistor …

Analytical models for electric potential, threshold voltage, and subthreshold swing of the
junctionless surrounding-gate field-effect transistors are presented. Poisson equation is …

The present article deals with the analytical modeling of threshold voltage of an ultra-thin
nanotube Junctionless double-gate-all-around (NJL-DGAA) metal-oxide-semiconductor field …

Ultrashort-channel junctionless FETs (JL-FETs) were fabricated on silicon-on-insulator
substrates utilizing atomically sharp V-shaped grooves produced by anisotropic wet etching …

A physics-based analytical model of electrostatic potential for short-channel junctionless
double-gate MOSFETs (JLDGMTs) operated in the subthreshold regime is proposed, in …

As the channel length shrinks below the 10-nm regime, emerging materials, junctionless
technology, and multiple-gate geometries provide an excellent combination to continue …