GaAs (0 0 1) has been one of the most intensively studied surfaces for the past 30 years due
both to its importance as a substrate for epitaxial growth and to the challenge its phase …

Most materials phenomena are manifestations of processes that are operative over a vast
range of length and time scales. A complete understanding of the behaviour of materials …

Epitaxy provides readers with a comprehensive treatment of the modern models and
modifications of epitaxy, together with the relevant experimental and technological …

The theoretical grounds of the modern relativistic methods for quantum chemical calculation
of spin–spin coupling constants in nuclear magnetic resonance spectra are considered …

An analytic, bond-order potential (BOP) is proposed and parametrized for the gallium
arsenide system. The potential addresses primary (σ) and secondary (π) bonding and the …

In the experiments on the etched surface of gallium arsenide were performed. We studied
the effect of BCl 3 gas flow rate on the thickness of the etched layer. GaAs etching rate was …

In recent years, the self-assembled growth of semiconductor nanostructures, that show
quantum size effects, has been of considerable interest. Laser devices operating with self …

We demonstrate how first-principles calculations using density-functional theory (DFT) can
be applied to gain insight into the molecular processes that rule the physics of materials …

We study the energetics of island formation in Stranski-Krastanow growth of highly
mismatched heteroepitaxy within a parameter-free approach. It is shown that the (frequently …

The paper presents the experimental results of the combination of AFM lithography and
plasma chemical etching the surface of the gallium arsenide samples. Results dilution and …