Wide-bandgap semiconductor ultraviolet photodetectors
Industries such as the automotive, aerospace or military, as well as environmental and
biological research have promoted the development of ultraviolet (UV) photodetectors …
biological research have promoted the development of ultraviolet (UV) photodetectors …
Insulated gate and surface passivation structures for GaN-based power transistors
Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …
unprecedented power and frequency levels and demonstrating their capability as an able …
Electronic surface and dielectric interface states on GaN and AlGaN
GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …
devices; however, they are plagued by a high density of interface states that affect device …
Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy
EJ Miller, ET Yu, P Waltereit, JS Speck - Applied physics letters, 2004 - pubs.aip.org
Temperature-dependent current–voltage measurements have been used to determine the
reverse-bias leakage current mechanisms in Schottky diodes fabricated on GaN grown by …
reverse-bias leakage current mechanisms in Schottky diodes fabricated on GaN grown by …
Leakage mechanism in GaN and AlGaN Schottky interfaces
T Hashizume, J Kotani, H Hasegawa - Applied Physics Letters, 2004 - pubs.aip.org
Based on detailed temperature-dependent current–voltage (I–V–T) measurements the
mechanism of leakage currents through GaN and AlGaN Schottky interfaces is discussed …
mechanism of leakage currents through GaN and AlGaN Schottky interfaces is discussed …
Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
EJ Miller, XZ Dang, ET Yu - Journal of applied Physics, 2000 - pubs.aip.org
Gate leakage currents in AlGaN/GaN heterostructure field-effect transistor (HFET) structures
with conventional and polarization-enhanced barriers have been studied. Comparisons of …
with conventional and polarization-enhanced barriers have been studied. Comparisons of …
[BOOK][B] Handbook of nitride semiconductors and devices, GaN-based optical and electronic devices
H Morkoç - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
Barrier inhomogeneity and electrical properties of Pt∕ GaN Schottky contacts
The temperature dependence of the electrical properties of Pt∕ Ga N Schottky barrier was
studied. In particular, a Schottky barrier height of 0.96 eV and an ideality factor of 1.16 were …
studied. In particular, a Schottky barrier height of 0.96 eV and an ideality factor of 1.16 were …
Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction
The dependence of the Schottky barrier height of Ni/Al x Ga 1− x N contact on the Al mole
fraction up to x= 0.23 was studied. The barrier heights were measured by I–V, capacitance …
fraction up to x= 0.23 was studied. The barrier heights were measured by I–V, capacitance …
Graphene-based transparent conductive electrodes for GaN-based light emitting diodes: Challenges and countermeasures
Graphene, with attractive electrical, optical, mechanical and thermal properties, is
considered to be an ideal candidate for transparent conductive electrodes (TCEs) in many …
considered to be an ideal candidate for transparent conductive electrodes (TCEs) in many …