Investigations on fluorite-structured ferroelectric HfO2/ZrO2 thin films are aiming to achieve
high-performance films required for memory and computing technologies. These films …

The hafnium-zirconium oxide (HZO) has been reported to be a promising candidate for low-
power VLSI logic and memory applications. However, the demand for high processing …

Ultrawide bandgap ferroelectric nitride semiconductors have shown promising applications
in electronic, micromechanical, and optical devices. Current studies, however, have largely …

Ferroelectric thin films incorporating different compositional layers have emerged as a
promising approach for enhancing properties and performance of electronic devices. In …

Antiferroelectric (AFE) ZrO 2-based devices are anticipated to exhibit superior endurance
properties in comparison to their ferroelectric (FE) counterparts. Nevertheless, the …

The metastable nature of the ferroelectric phase of HfO2 is a significant impediment to its
industrial application as a functional ferroelectric material. In fact, no polar phases exist in …

We have developed and experimentally demonstrated anti-ferroelectric (AFE) ZrO2
capacitors with operating voltage () lower than 1.2 V while maintaining sufficient memory …

The ferroelectric tunnel junction (FTJ), which possesses a simple structure, low power
consumption, high operation speed, and nondestructive reading, has attracted great …

A comprehensive quantitative root cause study of defect evolution leading to memory
window closure from a charge balance and charge trap** perspective throughout all …

Hybrid improper ferroelectrics (HIFs), characterized by ferroelectric polarization arising from
the rotation of two symmetry inequivalent antiferrodistortive modes, exhibit exotic properties …