Hafnia-based ferroelectric (FE) thin films are promising candidates for semiconductor
memories. However, a fundamental challenge that persists is the lack of understanding …

Leveraging the nonvolatile, nanoscale controllable polarization, ferroelectric perovskite
oxides can be integrated with various functional materials for designing emergent …

The discovery of ferroelectricity in nanoscale hafnia‐based oxide films has spurred interest
in understanding their emergent properties. Investigation focuses on the size‐dependent …

Ferroelectric materials promise exceptional attributes including low power dissipation, fast
operational speeds, enhanced endurance, and superior retention to revolutionize …

Ferroelectric hafnia exhibits promising robust polarization and silicon compatibility for
ferroelectric devices. Unfortunately, it suffers from difficult polarization switching. Methods to …

Robust ferroelectricity in nanoscale fluorite oxide-based thin films enables promising
applications in silicon-compatible non-volatile memories and logic devices. However, the …

Metastable phases can exist within local minima in the potential energy landscape when
they are kinetically “trapped” by various processing routes, such as thermal treatment, grain …

This article is written on behalf of many colleagues, collaborators, and researchers in the
field of advanced materials who continue to enable and undertake cutting-edge research in …

To describe charge-polarization coupling in the nanostructure formed by a thin Hf x Zr 1− x O
2 film with single-layer graphene as the top electrode, we develop the “effective” Landau …

HfO2-based thin films hold huge promise for integrated devices as they show full
compatibility with semiconductor technologies and robust ferroelectric properties at …