Effects of rb incorporation and water degradation on the stability of the cubic formamidinium lead iodide perovskite surface: a first-principles study
Y Guo, C Li, X Li, Y Niu, S Hou… - The Journal of Physical …, 2017 - ACS Publications
Despite the major improvements in device efficiency, perovskite solar cells (PSCs) are
limited by their poor stability due to the degradation toward moisture. Recently studies have …
limited by their poor stability due to the degradation toward moisture. Recently studies have …
Two Phosphates: Noncentrosymmetric Cs6Mg6(PO3)18 and Centrosymmetric Cs2MgZn2(P2O7)2
Two new phosphates Cs6Mg6 (PO3) 18 (CMP) and Cs2MgZn2 (P2O7) 2 (CMZP) have
been obtained, using high-temperature molten methods. Crystals of CMP with the polar P 21 …
been obtained, using high-temperature molten methods. Crystals of CMP with the polar P 21 …
Electronic engineering of transition metal Zn-doped InGaN nanorods arrays for photoelectrochemical water splitting
J Lin, Y Yu, Z Xu, F Gao, Z Zhang, F Zeng… - Journal of Power …, 2020 - Elsevier
The fast charge carrier recombination and slow oxidation kinetics of ternary semiconductor
InGaN as promising photocatalyst impede the PEC performance. Herein, we fabricate …
InGaN as promising photocatalyst impede the PEC performance. Herein, we fabricate …
Pb@Pb8 Basket-like-Cluster-Based Lead Tellurate–Nitrate Kleinman-Forbidden Nonlinear-Optical Crystal: Pb9Te2O13(OH)(NO3)3
YG Chen, N Yang, XX Jiang, Y Guo… - Inorganic …, 2017 - ACS Publications
The first lead tellurate–nitrate nonlinear-optical (NLO) crystal, Pb9Te2O13 (OH)(NO3) 3,
featuring a 3D anionic diamondlike toplogical structural motif formulated as [Pb9O13] 8 …
featuring a 3D anionic diamondlike toplogical structural motif formulated as [Pb9O13] 8 …
Subsurface reconstruction and saturation of surface bonds
L Liu, Y Sun, Z Cheng, J Zhu, R Yu - Science bulletin, 2018 - Elsevier
Surface reconstructions and stabilization mechanisms have been great challenges for
insulators. Based on accurate determination of the long-sought atomic structure of the spinel …
insulators. Based on accurate determination of the long-sought atomic structure of the spinel …
Polarity-Controlled GaN Epitaxial Films Achieved via Controlling the Annealing Process of ScAlMgO4 Substrates and the Corresponding Thermodynamic …
Y Zheng, W Wang, X Li, Y Li, T Yan… - The Journal of Physical …, 2018 - ACS Publications
Polarity-controlled GaN epitaxial films with Ga-and N-polarity are intentionally obtained by
controlling annealing processes of ScAlMgO4 substrates. It is proved by high-angle annular …
controlling annealing processes of ScAlMgO4 substrates. It is proved by high-angle annular …
Flexible cation distribution for stabilizing a spinel surface
L Liu, Z Cheng, J Zhu, R Yu - The Journal of Physical Chemistry C, 2020 - ACS Publications
The determination of the atomic structure of oxide surfaces has been a challenge because of
their structural complexity. In this study, the coexistence of two types of reconstructions of the …
their structural complexity. In this study, the coexistence of two types of reconstructions of the …
The mechanism of indium-assisted growth of (In) GaN nanorods: eliminating nanorod coalescence by indium-enhanced atomic migration
Z Xu, Y Yu, J Han, L Wen, F Gao, S Zhang, G Li - Nanoscale, 2017 - pubs.rsc.org
Both well vertically aligned and uniformly separated (In) GaN nanorods (NRs) were
successfully grown on Si (111) substrates by plasma-assisted molecular beam epitaxy …
successfully grown on Si (111) substrates by plasma-assisted molecular beam epitaxy …
Electronic Properties of the Graphdiyne/CH3NH3PbI3 Interface: A First‐Principles Study
Y Guo, Y Xue, C Li, X Li - physica status solidi (RRL)–Rapid …, 2020 - Wiley Online Library
Graphdiyne (GDY), when used as the surface modifier, significantly influences the
optoelectronic properties of the perovskite solar cells. To explore such impact for novel high …
optoelectronic properties of the perovskite solar cells. To explore such impact for novel high …
Insight into the Ga/In flux ratio and crystallographic plane dependence of MBE self-assembled growth of InGaN nanorods on patterned sapphire substrates
A controllable self-assembled growth using molecular beam epitaxy (MBE) of dense,
uniform, and high-aspect-ratio InGaN nanorods (NRs) is achieved through regulating the …
uniform, and high-aspect-ratio InGaN nanorods (NRs) is achieved through regulating the …