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Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks
Recent experimental measurements, without any theoretical guidance, showed that isotropic
polarization response can be achieved by increasing the number of quantum-dot (QD) …
polarization response can be achieved by increasing the number of quantum-dot (QD) …
Atomistic theoretical study of electronic and polarization properties of single and vertically stacked elliptical InAs quantum dots
The demonstration of isotropic polarization response from semiconductor quantum dots
(QDs) is a crucial step towards the design of several optoelectronic technologies. Among …
(QDs) is a crucial step towards the design of several optoelectronic technologies. Among …
Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm)
The design of some optical devices, such as semiconductor optical amplifiers for
telecommunication applications, requires polarization-insensitive optical emission at long …
telecommunication applications, requires polarization-insensitive optical emission at long …
The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties
III–V growth and surface conditions strongly influence the physical structure and resulting
optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired …
optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired …
In-plane polarization anisotropy of ground state optical intensity in InAs/GaAs quantum dots
The design of optical devices such as lasers and semiconductor optical amplifiers for
telecommunication applications requires polarization insensitive optical emissions in the …
telecommunication applications requires polarization insensitive optical emissions in the …
Tuning of polarization sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics
Tailoring of electronic and optical properties of self-assembled InAs quantum dots (QDs) is a
critical limit for the design of several QD-based optoelectronic devices operating in the …
critical limit for the design of several QD-based optoelectronic devices operating in the …
[HTML][HTML] Optical TCAD on the Net: A tight-binding study of inter-band light transitions in self-assembled InAs/GaAs quantum dot photodetectors
A new capability of our well-known NEMO 3-D simulator (Ref. Klimeck et al., 2007 [10]) is
introduced by carefully investigating the utility of III–V semiconductor quantum dots as …
introduced by carefully investigating the utility of III–V semiconductor quantum dots as …
[HTML][HTML] Optical anisotropy in type-II ZnTe/ZnSe submonolayer quantum dots
Linearly polarized photoluminescence is observed for type-II ZnTe/ZnSe submonolayer
quantum dots (QDs). The comparison of spectral dependence of the degree of linear …
quantum dots (QDs). The comparison of spectral dependence of the degree of linear …
Size-dependent Electronic and Polarization Properties of Multi-Layer InAs Quantum Dot Molecules
In this chapter, we analyze the polarization response of multi-layer quantum dot molecules
(QDMs) containing up to nine vertically stacked quantum dot layers by carrying out a …
(QDMs) containing up to nine vertically stacked quantum dot layers by carrying out a …
Atomistic theoretical study of electronic and polarization properties of elliptical, single and vertically stacked InAs quantum dots
The demonstration of isotropic polarization response from semiconductor quantum dots
(QDs) is a crucial step towards the design of several optoelectronic technologies. Among …
(QDs) is a crucial step towards the design of several optoelectronic technologies. Among …