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High-pressure phases of group-IV, III–V, and II–VI compounds
Advances in the accuracy and efficiency of first-principles electronic structure calculations
have allowed detailed studies of the energetics of materials under high pressures. At the …
have allowed detailed studies of the energetics of materials under high pressures. At the …
Crystal structure prediction via particle-swarm optimization
We have developed a method for crystal structure prediction from “scratch” through particle-
swarm optimization (PSO) algorithm within the evolutionary scheme. PSO technique is …
swarm optimization (PSO) algorithm within the evolutionary scheme. PSO technique is …
Theoretical study of the relative stability of structural phases in group-III nitrides at high pressures
We present the results of a first-principles theoretical study of the relative stability of several
structural phases of the group–III nitrides AlN, GaN, and InN that complements the picture of …
structural phases of the group–III nitrides AlN, GaN, and InN that complements the picture of …
Structural transitions in the group IV, III-V, and II-VI semiconductors under pressure
RJ Nelmes, MI McMahon - Semiconductors and semimetals, 1998 - Elsevier
Publisher Summary This chapter discusses structural transitions in the group IV, III–V, and II–
VI semiconductors under pressure. The most preferred technique of structural transitions is …
VI semiconductors under pressure. The most preferred technique of structural transitions is …
High-pressure phases of group IV and III-Vsemiconductors
GJ Ackland - Reports on Progress in Physics, 2001 - iopscience.iop.org
High-pressure phases of group IV and III-V semiconductors - IOPscience Skip to content
IOP Science home Accessibility Help Search Journals Journals list Browse more than 100 …
IOP Science home Accessibility Help Search Journals Journals list Browse more than 100 …
Accurate critical pressures for structural phase transitions of group IV, III-V, and II-VI compounds from the SCAN density functional
Most of the group IV, III-V, and II-VI compounds crystallize in semiconductor structures under
ambient conditions. Upon application of pressure, they undergo structural phase transitions …
ambient conditions. Upon application of pressure, they undergo structural phase transitions …
Modified Particle Swarm Optimization Algorithms for the Generation of Stable Structures of Carbon Clusters, Cn (n = 3–6, 10)
Particle Swarm Optimization (PSO), a population based technique for stochastic search in a
multidimensional space, has so far been employed successfully for solving a variety of …
multidimensional space, has so far been employed successfully for solving a variety of …
First-principles study on structural properties and phase stability of III-phosphide (BP, GaP, AlP and InP)
We have performed first principles total-energy calculations based on the full-potential
augmented plane-wave plus local orbitals (FP-LAPW+ lo) method in order to investigate the …
augmented plane-wave plus local orbitals (FP-LAPW+ lo) method in order to investigate the …
Nonexistence of the Diatomic -Tin Structure
RJ Nelmes, MI McMahon, SA Belmonte - Physical review letters, 1997 - APS
Many high-pressure phases of the III-V and II-VI semiconductors have been believed to have
the diatomic equivalent of the (tetragonal) β-tin structure. Recent work has shown this to be …
the diatomic equivalent of the (tetragonal) β-tin structure. Recent work has shown this to be …
High‐pressure stability and structural properties of CdS and CdSe
The structural phase transformations of CdS and CdSe under high pressure are studied by
using the local approximation to the density functional theory, and the one‐electron …
using the local approximation to the density functional theory, and the one‐electron …