Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Polarization assisted self-powered GaN-based UV photodetector with high responsivity
J Wang, C Chu, K Tian, J Che, H Shao, Y Zhang… - Photonics …, 2021 - opg.optica.org
In this work, a self-powered GaN-based metal-semiconductor-metal photodetector (MSM
PD) with high responsivity has been proposed and fabricated. The proposed MSM PD forms …
PD) with high responsivity has been proposed and fabricated. The proposed MSM PD forms …
Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process
This paper provides insights into the degradation of InGaN-based LEDs by presenting a
comprehensive analysis carried out on devices having two quantum wells (QWs) with …
comprehensive analysis carried out on devices having two quantum wells (QWs) with …
Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg
To accelerate the development of GaN power devices, reproducible fabrication of p-type
GaN (p-GaN) segments by ion-implantation (I/I) that enables selective-area do** is …
GaN (p-GaN) segments by ion-implantation (I/I) that enables selective-area do** is …
[HTML][HTML] Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted …
For rooting the development of GaN-based optoelectronic devices, understanding the roles
of midgap recombination centers (MGRCs), namely, nonradiative recombination centers and …
of midgap recombination centers (MGRCs), namely, nonradiative recombination centers and …
Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method
To investigate the carrier recombination processes in GaN crystals grown by the low-
pressure acidic ammonothermal (LPAAT) method, the photoluminescence (PL) spectra and …
pressure acidic ammonothermal (LPAAT) method, the photoluminescence (PL) spectra and …
Enhanced activation of Mg ion-implanted GaN at decreasing annealing temperature by prolonging duration
T Nakashima, E Kano, K Kataoka, S Arai… - Applied Physics …, 2020 - iopscience.iop.org
Defect time-evolution was investigated in Mg ion-implanted GaN after annealing at 1573 K
for an unprecedentedly long duration. Transmission electron microscopy directly revealed …
for an unprecedentedly long duration. Transmission electron microscopy directly revealed …
Electron lifetime and diffusion coefficient in dopant-free p-type distributed polarization doped AlGaN
Minority carrier properties in dopant-free p-type distributed polarization doped (DPD) AlGaN
layers were investigated on the basis of the forward-biased current density–voltage (J–V) …
layers were investigated on the basis of the forward-biased current density–voltage (J–V) …
Substitutional diffusion of Mg into GaN from GaN/Mg mixture
Y Itoh, S Lu, H Watanabe, M Deki, S Nitta… - Applied Physics …, 2022 - iopscience.iop.org
We evaluated Mg-diffusion into GaN from GaN/Mg mixture. The diffusion depth of Mg
increased with diffusion temperature from 1100 C to 1300 C, whereas the Mg concentration …
increased with diffusion temperature from 1100 C to 1300 C, whereas the Mg concentration …
Investigation on minority carrier lifetime, diffusion length and recombination mechanism of Mg-doped GaN grown by MOCVD
J Wang, X Wang, J Chen, X Gao, X Zeng, H Mao… - Journal of Alloys and …, 2021 - Elsevier
Minority carrier lifetime and diffusion length are important parameters for GaN based
material and devices. In this work, we obtained the minority carrier lifetime and diffusion …
material and devices. In this work, we obtained the minority carrier lifetime and diffusion …
Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation
Gallium nitride (GaN) has superior physical properties suitable for the realization of power
switching and high-frequency transistors with better performances than of conventional Si …
switching and high-frequency transistors with better performances than of conventional Si …