This paper proposes a drain current model for triple-gate n-type junctionless nanowire
transistors. The model is based on the solution of the Poisson equation. First, the 2-D …

This work proposes a physically-based definition for the threshold voltage, V TH, of
junctionless nanowire transistors and a methodology to extract it. The V TH is defined as the …

In this work, we have presented an analytical model for a recently proposed symmetrical
recessed double gate junctionless field‐effect transistor (R_DGJLFET) operating in …

The present paper presents a graded channel NWFET using a do**-less technique with a
core gate covering the channel and drain region. The graded channel and inner gate further …

The short-channel effect (SCE) is an important issue in CMOS technology. In this paper, a
junctionless (JL) poly-Si nanowire FET (NW-FET) with gated raised source/drain (S/D) was …

We propose the concept of the electrical junction in a junctionless (JL) field-effect-transistor
(FET) to illustrate the transfer characteristics of the JL FET. In this work, nanowire (NW) …

In this work we briefly review our 2-D compact model for nanoscale junctionless (JL) double-
gate (DG) MOSFETs and present and extension for 3-D triple-gate nanowire (TG-NW) …

In this report we focus on the performance of nanoscale double gate (DG) junctionless (JL)
and inversion mode (IM) MOSFETs. The study is performed using an analytical 2-D …

The double-gate MOSFET is proposed for high-voltage and high-power applications with
decreased short-channel effects (SCEs) and drain current with gate overlap. This model …

In this paper, we report the experimental extraction of ballistic transport parameters of
highperformance Germanium Nanowire nMOSFETs (Ge NWTs) with lengths L NW= 40-100 …