Emerging NVM: A survey on architectural integration and research challenges
There has been a surge of interest in Non-Volatile Memory (NVM) in recent years. With
many advantages, such as density and power consumption, NVM is carving out a place in …
many advantages, such as density and power consumption, NVM is carving out a place in …
What will come after V‐NAND—vertical resistive switching memory?
The NAND flash memory serves as the key enabler of the flourishing of portable handheld
information devices, such as the cellular phone. The recent upsurge in the sales of vertical …
information devices, such as the cellular phone. The recent upsurge in the sales of vertical …
Sibyl: Adaptive and extensible data placement in hybrid storage systems using online reinforcement learning
Hybrid storage systems (HSS) use multiple different storage devices to provide high and
scalable storage capacity at high performance. Data placement across different devices is …
scalable storage capacity at high performance. Data placement across different devices is …
Design of hybrid SSDs with storage class memory and NAND flash memory
NAND flash memory-based solid-state drives (SSDs) are increasingly being used in both
consumer and enterprise storage markets, due to their superior performance over hard disk …
consumer and enterprise storage markets, due to their superior performance over hard disk …
[BUCH][B] Flash Memory Integration: Performance and Energy Issues
J Boukhobza, P Olivier - 2017 - books.google.com
4 zettabytes (4 billion terabytes) of data generated in 2013, 44 zettabytes predicted for 2020
and 185 zettabytes for 2025. These figures are staggering and perfectly illustrate this new …
and 185 zettabytes for 2025. These figures are staggering and perfectly illustrate this new …
Self-learning hot data prediction: Where echo state network meets NAND flash memories
Well understanding the access behavior of hot data is significant for NAND flash memory
due to its crucial impact on the efficiency of garbage collection (GC) and wear leveling (WL) …
due to its crucial impact on the efficiency of garbage collection (GC) and wear leveling (WL) …
Characterization of inter-cell interference in 3D NAND flash memory
SK Park, J Moon - IEEE Transactions on Circuits and Systems I …, 2021 - ieeexplore.ieee.org
We characterize inter-cell interference in commercial three-dimensional NAND flash
memory. By writing random data into 3D NAND and collecting sample means and sample …
memory. By writing random data into 3D NAND and collecting sample means and sample …
Optimal memory configuration analysis in tri-hybrid solid-state drives with storage class memory and multi-level cell/triple-level cell NAND flash memory
C Matsui, T Yamada, Y Sugiyama… - Japanese Journal of …, 2017 - iopscience.iop.org
This paper analyzes the best mix of memories in a tri-hybrid solid-state drive (SSD) with
storage class memory (SCM) and multi-level cell (MLC)/triple-level cell (TLC) NAND flash …
storage class memory (SCM) and multi-level cell (MLC)/triple-level cell (TLC) NAND flash …
Memory system architecture for the data centric computing
K Takeuchi - Japanese Journal of Applied Physics, 2016 - iopscience.iop.org
This paper overviews the NAND flash memory and storage class memory such as resistive
random access memory (ReRAM), spin-transfer torque magnetoresistive random access …
random access memory (ReRAM), spin-transfer torque magnetoresistive random access …
BCH and LDPC error correction codes for NAND flash memories
A Marelli, R Micheloni - 3D Flash Memories, 2016 - Springer
Because NAND devices can't be manufactured without defects, the use of Error Correction
Codes (ECCs) has always been a common practice. While BCH (Bose-Chaudhuri …
Codes (ECCs) has always been a common practice. While BCH (Bose-Chaudhuri …