ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …

In the last decade, researchers and commercial companies have paid great attention to
ultrawide bandgap semiconductors especially gallium oxide (Ga 2 O 3). Ga 2 O 3 has very …

In the field of high-power electronics, gallium oxide (Ga2O3) is attracting attention due to its
wide bandgap and ability to be doped n-type. Point defects, including vacancies, impurities …

Gallium oxide (β-Ga 2 O 3) is an emerging semiconductor with relevant properties for power
electronics, solar-blind photodetectors, and some sensor applications due to its ultra-wide …

Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …

The wide bandgap semiconductors SiC and GaN are already commercialized as power
devices that are used in the automotive, wireless, and industrial power markets, but their …

A review is given of reported trap states in the bandgaps of different polymorphs of the
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …

As an ultrawide bandgap semiconductor, gallium oxide (Ga 2 O 3) has superior physical
properties and has been an emerging candidate in the applications of power electronics and …

This work explores the luminescence properties of self-trapped holes and impurity-related
acceptors using one-dimensional configuration coordinate diagrams derived from hybrid …

The effects of high energy neutron irradiation on the deep level defect concentration profile
throughout the bandgap of β-Ga 2 O 3 were investigated by a combination of deep level …