Metal organic vapour phase epitaxy of AlN, GaN, InN and their alloys: A key chemical technology for advanced device applications
IM Watson - Coordination Chemistry Reviews, 2013 - Elsevier
This article reviews metal organic vapour phase epitaxy (MOVPE) processes developed for
the group 13 nitrides AlN, GaN, InN and their alloys. The binaries are direct-gap …
the group 13 nitrides AlN, GaN, InN and their alloys. The binaries are direct-gap …
Advances and prospects in Ga2O3/GaN heterojunctions: From fabrication to high-performance devices
K Xu, R Wang, Y Wang, J Wang, T Zhi, G Yang… - Materials Science in …, 2025 - Elsevier
Abstract Gallium oxide (Ga 2 O 3) and gallium nitride (GaN) are fourth-and third-generation
semiconductor materials, respectively. Their heterogeneous structure (lattice mismatch of …
semiconductor materials, respectively. Their heterogeneous structure (lattice mismatch of …
New approaches for calculating absolute surface energies of wurtzite (0001)/(0001): A study of ZnO and GaN
The accurate absolute surface energies of (0001)/(000 1) surfaces of wurtzite structures
are crucial in determining the thin film growth mode of important energy materials. However …
are crucial in determining the thin film growth mode of important energy materials. However …
Hydrogen-surfactant-assisted coherent growth of GaN on ZnO substrate
Heterostructures of wurtzite based devices have attracted great research interest because of
the tremendous success of GaN in light emitting diodes (LED) industry. High-quality GaN …
the tremendous success of GaN in light emitting diodes (LED) industry. High-quality GaN …
MOCVD growth of GaN on Si (1 1 1) substrates using an ALD-grown Al2O3 interlayer
GaN thin films have been grown on Si (111) substrates using an atomic layer deposition
(ALD)-grown Al2O3 interlayer. This thin Al2O3 layer reduces strain in the subsequent GaN …
(ALD)-grown Al2O3 interlayer. This thin Al2O3 layer reduces strain in the subsequent GaN …
MOCVD growth of GaN on sapphire using a Ga2O3 interlayer
TY Tsai, SL Ou, MT Hung, DS Wuu… - Journal of The …, 2011 - iopscience.iop.org
Metalorganic chemical vapor deposition (MOCVD) was used to grow crystalline GaN on a
Ga 2 O 3 interlayer deposited by pulsed laser deposition. The Ga 2 O 3 interlayer situated …
Ga 2 O 3 interlayer deposited by pulsed laser deposition. The Ga 2 O 3 interlayer situated …
InGaN LED fabricated on Eco-GaN template with a Ga2O3 sacrificial layer for chemical lift-off application
In this study, a nitride light-emitting diode (LED) with an electroplated Cu substrate was
detached from a GaN/sapphire (Eco-GaN) template by chemical lift-off (CLO) using a Ga 2 O …
detached from a GaN/sapphire (Eco-GaN) template by chemical lift-off (CLO) using a Ga 2 O …
New CVD-based method for the growth of high-quality crystalline zinc oxide layers
F Huber, M Madel, A Reiser, S Bauer, K Thonke - Journal of Crystal Growth, 2016 - Elsevier
High-quality zinc oxide (ZnO) layers were grown using a new chemical vapour deposition
(CVD)-based low-cost growth method. The process is characterized by total simplicity, high …
(CVD)-based low-cost growth method. The process is characterized by total simplicity, high …
Chemical lift‐off process for nitride LEDs from an Eco‐GaN template using an AlN/strip‐patterned‐SiO2 sacrificial layer
RH Horng, HH Hsueh, SL Ou, CT Tsai… - … status solidi (a), 2017 - Wiley Online Library
In this research, a nitride light‐emitting diode (LED) fabricated on an electroplated Cu
substrate can be removed from a GaN/sapphire (Eco‐GaN) template by conducting the …
substrate can be removed from a GaN/sapphire (Eco‐GaN) template by conducting the …
GaN epilayer grown on Ga2O3 sacrificial layer for chemical lift-off application
GaN-on-sapphire structure with a Ga 2 O 3 sacrificial layer was employed for the chemical
lift-off process application. The (overline 2 01) β-oriented Ga 2 O 3 thin film was first …
lift-off process application. The (overline 2 01) β-oriented Ga 2 O 3 thin film was first …