Demonstration of -symmetric quantum state discrimination

X Wang, G Zhu, L **ao, X Zhan, P Xue - Quantum Information Processing, 2024 - Springer
The fundamental quantum mechanical features forbid non-orthogonal quantum states to be
distinguished accurately through a single-shot measurement. Using parity-time (PT) …
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Giant Rabi frequencies between qubit and excited hole states in silicon quantum dots

E Fanucchi, G Forghieri, A Secchi, P Bordone… - arxiv preprint arxiv …, 2024 - arxiv.org
Holes in Si quantum dots are being investigated for the implementation of electrically
addressable spin qubits. In this perspective, the attention has been focused on the electric …
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Envelope-function theory of inhomogeneous strain in semiconductor nanostructures

A Secchi, F Troiani - Physical Review B, 2024 - APS
Strain represents an ubiquitous feature in semiconductor heterostructures, and can be
engineered by different means in order to improve the properties of various devices …
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On the possible use of excited states in Si Quantum Dots

E FANUCCHI - fim.unimore.it
Hole-spin qubits in semiconductors are a mature platform for quantum technologies [1].
Specifically, the well-advanced fabrication techniques of Si devices, along with the small …
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