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Improvement of Breakdown Characteristic for a Novel GaN HEMT with Enhanced Resistance Single-Event Transient Effect
S Sun, Y Zhang, Y Si, J **ong, X Luo - Journal of Electronic Materials, 2024 - Springer
A novel AlGaN/GaN high-electron mobility transistor (HEMT) is put forward to promote its
breakdown characteristics and anti-single-event transient (SET) effect. The features of the …
breakdown characteristics and anti-single-event transient (SET) effect. The features of the …