The demand for improved electronic and optoelectronic devices has fuelled the
development of epitaxial growth techniques for single-crystalline semiconductors. However …

Si-based group III-V material enables a multitude of applications and functionalities of the
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …

There is currently much activity toward the integration of mid-infrared semiconductor lasers
on Si substrates for develo** a variety of smart, compact, sensors based on Si-photonics …

The number of photonic components integrated into the same circuit is approaching one
million, but so far, this has been without the large-scale integration of active components …

The monolithic hetero-integration of III/V materials on Si substrates could enable a multitude
of new device applications and functionalities which would benefit from both the excellent …

With technological progress, the request for high power LEDs (HP-LEDs) as a replacement
candidate for common lamp is increased. Due to dissipation of 70–85% of LED input power …

The field of optically pumped planar waveguide lasers has seen a rapid development over
the last two decades driven by the requirements of a range of applications. This sustained …

We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by
metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (≤ 500 nm) were …

An efficient photodetector (PD) is a key component in silicon-based photonic integrated
circuits (PICs). III–V PDs with low dark current density, large bandwidth, and wide operation …

Selective area epitaxy (SAE) using metal–organic chemical vapor deposition (MOCVD) is a
crucial fabrication technique for lasers and photonic integrated circuits (PICs). A low-cost …