Positron annihilation spectroscopy is particularly suitable for studying vacancy-type
defects<? format?> in semiconductors. Combining state-of-the-art experimental and …

Hydrogenated amorphous dielectric thin films are critical materials in a wide array of
technologies. In this work, we present a thorough investigation of the thermal conductivity of …

We investigate point defects and defect complexes in AlN for potential applicability as single-
spin centers and solid-state qubits analogous to those observed in diamond and SiC. We …

Vacancy‐type defects in Mg‐implanted GaN are probed using monoenergetic positron
beams. Mg+ ions are implanted to provide a 500‐nm‐deep box profile with Mg …

Vacancy‐type defects in Mg‐implanted GaN were probed using a monoenergetic positron
beam. Mg ions of multiple energies (15–180 keV) were implanted to provide a 200‐nm …

Vacancy-type defects in Mg-implanted GaN were probed by using a monoenergetic positron
beam. Mg ions were implanted into GaN to obtain 0.3-μm-deep box profiles with Mg …

Vacancy-type defects in AlN grown by metal-organic vapor phase epitaxy (MOVPE) and
lateral epitaxial overgrowth (LEO) using halide vapor phase epitaxy were probed by a …

Optical, electrical, mechanical, and thermal properties of group III nitrides, inclusive of AlN,
GaN, InN and their ternary and quaternary alloys, are discussed. The driving force for group …

Focusing on a VGa–VN complex vacancy defect in GaN, the adiabatic potential for
conformational changes of the VGa–VN is investigated using the density functional theory …

Vacancy‐type defects in Mg‐implanted GaN with and without hydrogen (H) implantation are
probed by using monoenergetic positron beams. Mg+ and H+ ions are implanted into GaN …