We review recent progress in the growth and characterization of Si 1− x Ge x islands and Ge
dots on (001) Si. We discuss the evolution of the island morphology with Si 1− x Ge x …

In this review the latest advances in the field of nanostructured photodetectors are
considered, stating the types and materials, and highlighting the features of operation …

Resonant dielectric nanostructures represent a promising platform for light manipulation at
the nanoscale. In this paper, we describe an active photonic system based on Ge (Si) …

We investigated the current–voltage characteristics and responsivity of photodiodes
fabricated with silicon that was microstructured by use of femtosecond-laser pulses in a …

In recent years, quantum dots have been successfully grown by self-assembling processes.
For optoelectronic device applications, the quantum-dot structures have advantages such as …

We demonstrate fast and efficient germanium-on-silicon pin photodetectors for optical
communications, with responsivities as high as 0.89 and 0.75 A/W at 1.3 and 1.55 μm …

Abstract A CMOS-compatible infrared (IR; 1200–1700 nm) detector based on Ge quantum
dots (QDs) decorated on a single Si-nanowire channel on a silicon-on-insulator (SOI) …

We report a high-performance graphene/ultra-thin silicon metal-semiconductor-metal (MSM)
ultraviolet (UV) photodetector, which benefits from the mechanical flexibility and high …

An array of plasmonic nanoparticles can sustain surface plasmon modes from visible to
infrared spectral range and thus offers effective surface light trap**, enhancement of local …

The aim of this work is to develop a Si/SiGe HBT-type phototransistor with several Ge dot
layers incorporated in the collector, in order to obtain improved light detectivity at 1.3–1.55 …