Neuromorphic devices based on fluorite‐structured ferroelectrics

DH Lee, GH Park, SH Kim, JY Park, K Yang… - InfoMat, 2022 - Wiley Online Library
A continuous exponential rise has been observed in the storage and processing of the data
that may not curtail in the foreseeable future. The required data processing speed and …

Back‐end CMOS compatible and flexible ferroelectric memories for neuromorphic computing and adaptive sensing

S Majumdar - Advanced Intelligent Systems, 2022 - Wiley Online Library
Development of unconventional computing architectures, including neuromorphic
computing, relies heavily on novel devices with properly engineered properties. This …

Enhancing memory window efficiency of ferroelectric transistor for neuromorphic computing via two‐dimensional materials integration

H **ang, YC Chien, L Li, H Zheng, S Li… - Advanced Functional …, 2023 - Wiley Online Library
In‐memory computing, particularly neuromorphic computing, has emerged as a promising
solution to overcome the energy and time‐consuming challenges associated with the von …

Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications

W Yang, C Yu, H Li, M Fan, X Song, H Ma… - Journal of …, 2023 - iopscience.iop.org
The finding of the robust ferroelectricity in HfO 2-based thin films is fantastic from the view
point of both the fundamentals and the applications. In this review article, the current …

Ferroelectric HfO2-based synaptic devices: recent trends and prospects

S Yu, J Hur, YC Luo, W Shim, G Choe… - Semiconductor Science …, 2021 - iopscience.iop.org
Neuro-inspired deep learning algorithms have shown promising futures in artificial
intelligence. Despite the remarkable progress in software-based neural networks, the …

Multilevel operation of ferroelectric fet memory arrays considering current percolation paths impacting switching behavior

F Müller, S De, R Olivo, M Lederer… - IEEE Electron …, 2023 - ieeexplore.ieee.org
This letter reports multi-level-cell (MLC) operation of ferroelectric FETs (FeFET) arranged in
AND-connected memory arrays with a bit-error rate (BER) of 4% when writing a random data …

A computationally efficient compact model for ferroelectric switching with asymmetric nonperiodic input signals

AD Gaidhane, R Dangi, S Sahay… - … on Computer-Aided …, 2022 - ieeexplore.ieee.org
In this article, we develop a Verilog-A implementable compact model for the dynamic
switching of ferroelectric FinFETs (Fe-FinFETs) for asymmetric nonperiodic input signals. We …

[HTML][HTML] Intrinsic synaptic plasticity of ferroelectric field effect transistors for online learning

A Saha, ANM Islam, Z Zhao, S Deng, K Ni… - Applied Physics …, 2021 - pubs.aip.org
Nanoelectronic devices emulating neuro-synaptic functionalities through their intrinsic
physics at low operating energies are imperative toward the realization of brain-like …

Efficient implementation of max-pooling algorithm exploiting history-effect in ferroelectric-FinFETs

M Rafiq, SS Parihar, YS Chauhan… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Convolutional neural networks (CNNs) have become the state-of-the-art tool for image
classification, object detection, and segmentation. The max-pooling layer in the CNN …

Investigating ferroelectric minor loop dynamics and history effect—Part I: Device characterization

P Wang, Z Wang, X Sun, J Hur, S Datta… - … on Electron Devices, 2020 - ieeexplore.ieee.org
Doped HfO2-based ferroelectric field-effect transistor (FeFET) is being actively explored as
an emerging nonvolatile memory device with the potential for in-memory computing. In this …