pH-sensing materials and configurations are rapidly evolving toward exciting new
applications, especially those in biomedical applications. In this review, we highlight rapid …

GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …

Ga 2 O 3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n−-
Ga 2 O 3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+-Ga 2 O 3 (001) …

X-ray photoelectron spectroscopy has been used to investigate the properties of AlN films
deposited using a low temperature plasma-enhanced atomic layer deposition process …

We have systematically investigated effects of plasma processing, formation of Si-based
dielectrics, and formation of a thin Al 2 O 3 film on the chemical and electronic properties of …

In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–
nitride heterostructures where the active region of the device and the top p-GaN layers were …

The integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on
flexible substrates offers opportunities for applications beyond rigid solid-state lighting (eg …

We present a vertical GaN planar metal-oxide-semiconductor field-effect transistor
(MOSFET) fabricated by an all ion implantation process. The fabricated MOSFET shows an …

The effect of various combinations of gaseous (ultraviolet/O 3), liquid (HCl, buffered oxide
etch, and H 2 O 2), or plasma (CF 4 and O 2) treatments of the surface of β-Ga 2 O 3 was …

Gallium nitride (GaN) film delamination is an important process during the fabrication of GaN
light-emitting diodes (LEDs) and laser diodes. Here, we utilize 520 nm femtosecond laser …